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				Vishay Siliconix
Part No.	VS-MBR1545CTPBF
OCR Text	...fier has been optimized for low reverse leak age at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction temperature. typical applications are in switching power supplies, converters, freew...
Description	Schottky Rectifier
File Size	127.62K / 7 Page	View it Online	Download Datasheet

				Kersemi Electronic Co., Ltd.
Part No.	VS-MBR15
OCR Text	...fier has been optimized for low reverse leak age at high temperature. the proprietary barrier technology allows for reliable operation up to 150 c junction tempera ture. typical applications are in switching power supplies, converters, fre...
Description	Low forward voltage drop
File Size	1,952.23K / 5 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electron...
Part No.	AP2606GY-HF AP2606GY-HF-14
OCR Text	...tance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.3a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i ...
Description	Fast Switching Characteristic, Lower Gate Charge
File Size	85.82K / 5 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp. Advanced Power Electronics ...
Part No.	AP15T25H-HF AP15T25H-HF14
OCR Text	...tance v ds =25v - 85 - pf c rss reverse transfer capacitance f=1.0mhz - 55 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =4a, v gs =0v - - 1...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	58.43K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP15T20GS-HF14
OCR Text	...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description	Simple Drive Requirement
File Size	54.85K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP15T20GI-HF AP15T20GI-HF14
OCR Text	...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description	N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement
File Size	56.44K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP15T20GH-HF14
OCR Text	...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description	Simple Drive Requirement N-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	54.81K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP15T20AGH-HF14
OCR Text	...ance v ds =25v - 100 - pf c rss reverse transfer capacitance f=1.0mhz - 70 - pf r g gate resistance f=1.0mhz - 1.5 3 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =5a, v gs =0v - - 1...
Description	Simple Drive Requirement Simple Drive Requirement, Lower Gate Charge, Fast Switching Characteristics
File Size	117.72K / 4 Page	View it Online	Download Datasheet

				VISHAY INTERTECHNOLOGY INC
Part No.	VSKJ91/04P
OCR Text	... rrm , maximum repetitive peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm maximum at t j = 150 c ma vsk.91 04 400 500 10 06 600 700 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 fo...
Description	100 A, 400 V, SILICON, RECTIFIER DIODE
File Size	173.73K / 8 Page	View it Online	Download Datasheet

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