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Part No.	MBR40150PT
OCR Text	reverse voltage (v) maximum rms voltage (v) maximum dc blocking voltage (v) maximum average forward rectified current at t c=125c vrrm vrms vdc i f (av) tj tstg operating junction temperature range storage temperature range ? 65 to + 175 c ...
Description	40 A, 150 V, SILICON, RECTIFIER DIODE, TO-247AD
File Size	356.82K / 3 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	DF2B6.8M2SC
OCR Text	... ) ) ) ) v rwm : working peak reverse voltage v br : reverse breakdown voltage i br : reverse breakdown current i r : reverse current v c : clamp voltage i pp : peak pulse current r dyn : dynamic resistance fig. fig. fig. fig. 4.1 4.1...
Description	ESD protection diode (bi-directional type)
File Size	254.12K / 8 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	DF2B12M2SC
OCR Text	... ) ) ) ) v rwm : working peak reverse voltage v br : reverse breakdown voltage i br : reverse breakdown current i r : reverse current v c : clamp voltage i pp : peak pulse current r dyn : dynamic resistance fig. fig. fig. fig. 4.1 4.1...
Description	ESD protection diode (bi-directional type)
File Size	241.20K / 8 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2348GN-HF14
OCR Text	...tance v ds =25v - 30 - pf c rss reverse transfer capacitance f=1.0mhz - 20 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1a, v gs =0v - - 1.3 v t rr reverse recovery time i s =1...
Description	Simple Drive Requirement
File Size	92.20K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2346GN-HF AP2346GN-HF14
OCR Text	...ance v ds =10v - 175 - pf c rss reverse transfer capacitance f=1.0mhz - 155 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v ...
Description	Capable of 1.8V Gate Drive, Lower Gate Charge Fast Switching Performance
File Size	55.37K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2340GN-HF14
OCR Text	...tance v ds =15v - 60 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf r g gate resistance f=1.0mhz - 1.7 3.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v -...
Description	Fast Switching Characteristic
File Size	53.71K / 4 Page	View it Online	Download Datasheet

				Advanced Power Electronics
Part No.	AP9565GEM-HF-3
OCR Text	...nce v ds =-25v - 160 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf r g gate resistance f=1.0mhz - 6 9 w symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.9a, v gs =0v - - -1.3 v t rr...
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
File Size	97.15K / 5 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	AP2324GN-HF
OCR Text	...ance v ds =20v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.7 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - ...
Description	Advanced Power MOSFETs
File Size	96.71K / 2 Page	View it Online	Download Datasheet

				Advanced Power Electronics Corp.
Part No.	AP2324GN-HF
OCR Text	...ance v ds =20v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf r g gate resistance f=1.0mhz - 1.7 - source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.2a, v gs =0v - ...
Description	Capable of 2.5V gate drive, Lower Gate Charge
File Size	90.97K / 4 Page	View it Online	Download Datasheet

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