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    APT60DS04HJ

Microsemi Corporation
Part No. APT60DS04HJ
OCR Text ... ratings unit v r maximum dc reverse voltage v rrm maximum peak repetitive reverse voltage 45 v i fav rectangular, d = 0.5 t c = 80c 60 i fsm non-repetitive forward surge current t = 10ms t j = 45c 600 a ...
Description ISOTOP Schottky Diode Full Bridge Power Module

File Size 59.18K  /  3 Page

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    AP9579GS-HF

Advanced Power Electronics Corp.
Part No. AP9579GS-HF
OCR Text ...nce v ds =-25v - 375 - pf c rss reverse transfer capacitance f=1.0mhz - 270 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.3 v t rr reverse recovery time 2 ...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 91.55K  /  4 Page

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    AP9579GP-HF AP9579GP-HF14

Advanced Power Electronics Corp.
Part No. AP9579GP-HF AP9579GP-HF14
OCR Text ...nce v ds =-25v - 375 - pf c rss reverse transfer capacitance f=1.0mhz - 270 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-20a, v gs =0v - - -1.3 v t rr reverse recovery time 2 ...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 92.00K  /  4 Page

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    AP9579GM-HF AP9579GM-HF14

Advanced Power Electronics Corp.
Part No. AP9579GM-HF AP9579GM-HF14
OCR Text ...nce v ds =-15v - 450 - pf c rss reverse transfer capacitance f=1mhz - 300 - pf r g gate resistance f=1.0mhz - 2.5 5 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.9a, v gs =0v - -...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Simple Drive Requirement

File Size 56.22K  /  4 Page

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    MCD200-18IO1

IXYS Corporation
Part No. MCD200-18IO1
OCR Text ...drm rsm/dsm max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage r/d reverse current, drain current t t r/d r/d 200 ixys reserves the right to change limits, conditions and dimensions. 201311...
Description Thyristor Module

File Size 181.71K  /  6 Page

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    IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR

IRF[International Rectifier]
Part No. IRF1010EL IRF1010ES IRF1010ESTRL IRF1010ESTRR
OCR Text ... Forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Ca...
Description 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
60V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=60V/ Rds(on)=12mohm/ Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?)
Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=84A?

File Size 122.02K  /  10 Page

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    IRF1010E

International Rectifier
Part No. IRF1010E
OCR Text ... Forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Ca...
Description Power MOSFET(Vdss=60V,Rds(on)=12mohm,Id=84A?

File Size 143.91K  /  8 Page

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    IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF

IRF[International Rectifier]
Part No. IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1010NSTRL IRF1010NLPBF
OCR Text ... Forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Ca...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?

File Size 144.82K  /  10 Page

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    IRF1010N

IRF[International Rectifier]
Part No. IRF1010N
OCR Text ... Forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Ca...
Description Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A)

File Size 154.40K  /  8 Page

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    IRF1010Z IRF1010ZL IRF1010ZS

IRF[International Rectifier]
Part No. IRF1010Z IRF1010ZL IRF1010ZS
OCR Text ... Forward Leakage Gate-to-Source reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Ca...
Description 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET

File Size 298.51K  /  12 Page

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