| PART |
Description |
Maker |
| GBJ25005-BP GBJ2504-BP GBJ2510-BP GBJ2502-BP GBJ25 |
RECT BRIDGE GPP 25A 50V GBJ 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 400V GBJ 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 1000V GBJ 25 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE
RECT BRIDGE GPP 25A 200V GBJ 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE
25 Amp Glass Passivated Bridge Rectifier 50 to 1000 Volts
|
Micro Commercial Components, Corp.
Micro Commercial Compon...
|
| GS2M GS2B GS2G GS2J GS2K GS2A GS2D |
2.0 Amp Silicon Rect.0 Amp Silicon Rectifier 50 to 1000 Voltsifier 50 to 1000 OLTS
|
Micro Commercial Components Corp.
|
| NCP1423DMR2G |
400 mA Sync−Rect PFM Step−Up DC−DC Converter with True−Cutoff and Ring−Killer 1.2 A SWITCHING REGULATOR, 600 kHz SWITCHING FREQ-MAX, PDSO10
|
ON Semiconductor
|
| 1N1673 1N1660 1N2054 1N3270 1N3271 1N3272 1N3273 1 |
SILICON POWER RECTIFIER
Standard Rectifier (trr more than 500ns) 标准整流器（花环率超00ns的）
Round Conductor Flat Cable, 2049/26 30 AWG, .025 (0.64) 275 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AB
CLOTH CLEANING HI-PERF BLUE 275 A, 500 V, SILICON, RECTIFIER DIODE, DO-205AB
CABLE 100 COND .025 FLAT 100FT
Round Conductor Flat Cable, 2049/100 30 AWG, .025 (0.64)
Round Conductor Flat Cable, 2049/36 30 AWG, .025 (0.64)
Round Conductor Flat Cable, 2049/34 30 AWG, .025 (0.64)
Round Conductor Flat Cable, 2049/20 30 AWG, .025 (0.64)
Round Conductor Flat Cable, 2049/40 30 AWG, .025 (0.64)
Masking Tape; Tape Backing Material:Crepe Paper; Width:1"; Roll Length:60yard; Adhesive Material:Rubber; Leaded Process Compatible:No; Pack Quantity:1 RoHS Compliant: Yes 275 A, 1200 V, SILICON, RECTIFIER DIODE, DO-205AB
|
Motorola Mobility Holdings, Inc.
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
|
| NJM2386DL2 NJM2388F NJM2388 NJM2386 NJM2386DL3 |
3896/50 275 50/CAB/RC/RJFL/TYP1/PVC/30AWG/STR/.025/275'SF RoHS Compliant: Yes
LOW DROPOUT VOLTAGE REGULATOR WITH ON/OFF CONTROL 低压差稳压带ON / OFF控制
|
NJRC[New Japan Radio]
New Japan Radio Co., Ltd.
|
| HUF75925D3ST HUF75925P3 HUF75831SK8 |
3A/ 150V/ 0.095 Ohm/ N-Channel/ UltraFET Power MOSFET
11A, 200V, 0.275 Ohm, N-Channel, UltraFETPower MOSFETs
11A, 200V, 0.275 Ohm, N-Channel, UltraFET Power MOSFETs
11A 200V 0.275 Ohm N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| LT1373CS8TRPBF |
250kHz Low Supply Current High Efficiency 1.5A Switching Regulator; Package: SO; No of Pins: 8; Temperature Range: 0°C to 70°C 1.5 A SWITCHING REGULATOR, 275 kHz SWITCHING FREQ-MAX, PDSO8
|
Linear Technology, Corp.
|
| CMSZ5236B CMSZ5225B CMSZ5239B CENTRALSEMICONDUCTOR |
surface mount silicon Zener diodes 7.5 V, 0.275 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 3 V, 0.275 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
surface mount silicon Zener diodes 9.1 V, 0.275 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
| HER301-T |
RECT HIGH-EFF 50V 3A DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
|
Diodes, Inc.
|
| NTE5811 NTE5891 NTE5810 NTE5870 NTE5890 NTE5874 NT |
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 500V. Average forward current 12A.
12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4
Silicon Power Rectifier Diode / 12 Amp
Silicon Power Rectifier Diode 12 Amp
Silicon Power Rectifier Diode, 12 Amp
Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 12A.
|
NTE[NTE Electronics]
|
| HIP1012ACBZA-T |
Dual Power Distribution Controller; Temperature Range: 0°C to 70°C; Package: 14-SOIC T&R 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO14
|
Intersil, Corp.
|
|
