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    5962-89805012A 5962-8980501CA 5962-8980501IA AD536A AD536AJCHIPS AD536AJD AD536AJH AD536AJQ AD536AKD AD536AKH AD536AKQ A

AD[Analog Devices]
Analog Devices, Inc.
Part No. 5962-89805012A 5962-8980501CA 5962-8980501IA AD536A AD536AJCHIPS AD536AJD AD536AJH AD536AJQ AD536AKD AD536AKH AD536AKQ AD536ASCHIPS AD536ASD AD536ASE AD536ASH 5962-89805 AD536 AD883B AD536AKH_ AD536AKH/
OCR Text ...SISTORS 5 1 AD536AJ Typ V OUT = avg . (VIN ) 2 15 V dc unless otherwise noted) AD536AK Typ avg . (VIN ) 2 Max Min V OUT = Max Min AD536AS Typ avg . (VIN ) 2 Max Units V OUT = 2 0.2 0.05 0.005 5 0.5 0.1 ...
Description Complete Monolithic IC Which Performs True RMS-to-DC Conversion
Circular Connector; MIL SPEC:MIL-C-26482, Series I; Body Material:Aluminum Alloy; Series:MS3126; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Straight Plug RoHS Compliant: No
JT 28C 26#20 2#16 SKT PLUG
Integrated Circuit True RMS-to-DC Converter RMS TO DC CONVERTER, 0.09 MHz, CDIP14
Integrated Circuit True RMS-to-DC Converter RMS TO DC CONVERTER, 0.09 MHz, MBCY10

File Size 149.33K  /  8 Page

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    MMZ25332BT1

Freescale Semiconductor, Inc
Part No. MMZ25332BT1
OCR Text ...ted note: bias config 1: 400 ma avg. using r2 = 330 ? bias config 2: 300 ma avg. using r2 = 470 ? v cc1 =v cc2 =v bias =5vdc f = 2140 mhz bias config 2 = 300 ma avg. bias config 1 note: bias config 2: 300 ma avg. using r2 = 470 ? uncorrecte...
Description Heterojunction Bipolar Transistor Technology (InGaP HBT)

File Size 568.40K  /  19 Page

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    LSI CORP
Part No. AGR19030EF
OCR Text ... gain (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 = 1930 mhz, f2 = 1932.5 mhz, and f1 = 1987.5 mhz, f2 = 1990 mhz) g ps 15.5 16 ? db drain efficiency (v dd =28vdc, p out = 6 w avg., 2-carrier n-cdma, i dq =350ma, f1 ...
Description L BAND, Si, N-CHANNEL, RF POWER, MOSFET

File Size 179.87K  /  11 Page

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    Infineon Technologies
Part No. PTFA181001F
OCR Text ... quiescent current (a) evm rms (avg. %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz edge modulation spectrum performance v dd = 28 v, i dq = 750 ma, ? = 1879.8 mhz -100 -80 -60 -40 -20 37 39 41 43...
Description Thermally-Enhanced High Power RF LDMOS FET

File Size 416.43K  /  11 Page

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Part No. BU52001GUL-E2
OCR Text ...period (ms) supply current (avg) (a) output type package bu52001gul 2.40 3.30 +/-3.7 0.8 50 8.0 cmos vcsp50l1 bu52015gul 1.65 3.30 +/-3.0 0.9 50 5.0 cmos vcsp50l1 bu52051nvx 1.65 3.30 +/-3.0 0.9 50 5.0 c...
Description MAGNETIC FIELD SENSOR-HALL EFFECT, 0.8-5.5mT, 0.40-2.60V, SQUARE, SURFACE MOUNT

File Size 862.97K  /  21 Page

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