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  900v Datasheet PDF File

For 900v Found Datasheets File :: 1610    Search Time::0.922ms    
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    Harris
Part No. MUR890E RURP890 MUR870E
OCR Text ... . . . . . . . .v rrm 700v 800v 900v 1000v working peak reverse voltage . . . . . . . . . . . . . . . . . . v rwm 700v 800v 900v 1000v dc blocking voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v r 700v 800v 900v 1000v a...
Description 700V - 1000V Ultrafast Diodes

File Size 39.20K  /  3 Page

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    APT36N90BC3G

Microsemi Corporation
Microsemi, Corp.
Part No. APT36N90BC3G
OCR Text 900v 36A APT36N90BC3G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. C OLMOS O Power Semiconductors Super Junction MOSFET TO -24 7 D3 * Ultra Low RDS(ON) * Low Miller Capacitance * Ultra Low Gate Charge, Qg * Aval...
Description Super Junction MOSFET
Power MOSFET; Package: TO-247 [B]; ID (A): 36; RDS(on) (Ohms): 0.12; BVDSS (V): 900; 36 A, 900 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247

File Size 133.82K  /  5 Page

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    APT64GA90B APT64GA90S

Microsemi Corporation
Part No. APT64GA90B APT64GA90S
OCR Text 900v High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE(ON) tradeoff re...
Description High Speed PT IGBT

File Size 196.62K  /  6 Page

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    APT64GA90LD30

Microsemi Corporation
Part No. APT64GA90LD30
OCR Text 900v High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE(ON) tradeoff results in superior efficien...
Description High Speed PT IGBT

File Size 226.62K  /  9 Page

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    CPW2870L5-01 CPW2870M5-01 CPW2870P5-01

Communications & Power Industries, Inc.
Part No. CPW2870L5-01 CPW2870M5-01 CPW2870P5-01
OCR Text ...W2870P5-01 24kW/12kW/6kW 1500V 900v max 50A max 134 lbs (master & slave) 6kW/2.5kW/600W 12kW/6kW/3kW 1500V 1500V 1000V max 900v max 10A max 25A max 50 lbs 67 lbs Remote analog control and sensing OPTIONS Arc Suppression Device: Arc ...
Description GEN 2.5 SERIES DC SPUTTERING POWER SUPPLY

File Size 116.41K  /  2 Page

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    DIM400DDM17-A00009

Dynex Semiconductor
Part No. DIM400DDM17-A00009
OCR Text ...recovery energy IF = 400A VCE = 900v dIF/dt = 3000A/s IC = 400A VGE = 15V VCE = 900v RG(ON) = 4.7 RG(OFF) = 4.7 LS ~ 100nH 120 250 250 150 100 230 70 mJ ns ns mJ C A mJ Test Conditions Min Typ. 1150 100 Max Units ns ns Tcase = 125C unles...
Description Dual Switch IGBT Module

File Size 275.21K  /  8 Page

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    TSM3N9014 TSM3N90CHC5G TSM3N90CZC0 TSM3N90CPROG TSM3N90CIC0G

Taiwan Semiconductor Company, Ltd
Part No. TSM3N9014 TSM3N90CHC5G TSM3N90CZC0 TSM3N90CPROG TSM3N90CIC0G
OCR Text 900v n-channel power mosfet 1/12 version: c13 to - 220 ito - 220 produ...
Description 900v N-Channel Power MOSFET
800V N-Channel Power MOSFET

File Size 545.11K  /  12 Page

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    FQA8N90C07

Fairchild Semiconductor
Part No. FQA8N90C07
OCR Text 900v N-Channel MOSFET November 2007 QFET FQA8N90C_F109 900v N-Channel MOSFET Features * * * * * * * 8A, 900v, RDS(on) = 1.9 @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 12pF) Fast switching 100% avalanche tested...
Description 900v N-Channel MOSFET

File Size 804.04K  /  8 Page

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    TSM4N90CIC0G TSM4N90CZC0 TSM4N9014

Taiwan Semiconductor Company, Ltd
Taiwan Semiconductor Co...
Part No. TSM4N90CIC0G TSM4N90CZC0 TSM4N9014
OCR Text 900v n-channel power mosfet 1/10 version: b13 to - 220 ito - 220 pr...
Description 900v N-Channel Power MOSFET
   900v N-Channel Power MOSFET

File Size 448.30K  /  10 Page

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    TSM4N90

Taiwan Semiconductor Company, Ltd
Part No. TSM4N90
OCR Text 900v n-channel power mosfet 1/10 version: a12 to - 220 ito - 220 pr...
Description 900v N-Channel Power MOSFET

File Size 388.61K  /  10 Page

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