| |
|
 |
MOTOROLA INC
MOTOROLA[Motorola, Inc]
|
| Part No. |
MTW10N100E
|
| OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses a...247AE
Value 1000 1000 20 40 10 6.2 30 250 2.0 - 55 to 150 500 0.50 40 260
Unit Vdc Vdc Vdc V... |
| Description |
TMOS POWER FET 10 AMPERES 1000 VOLTS RDS(on) = 1.3 OHM
|
| File Size |
192.35K /
8 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MOTOROLA[Motorola, Inc]
|
| Part No. |
MTW16N40E
|
| OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses a...247AE
Value 400 400 20 40 16 9.0 56 180 1.4 - 55 to 150 870 0.70 40 260
Unit Vdc Vdc Vdc Vpk... |
| Description |
TMOS POWER FET 16 AMPERES 400 VOLTS RDS(on) = 0.24 OHM
|
| File Size |
217.51K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| Part No. |
MTW32N25E MTW32N25
|
| OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is des...247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate V... |
| Description |
TMOS POWER FET 32 AMPERES 250 VOLTS RDS(on) = 0.08 OHM
|
| File Size |
152.04K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA[Motorola, Inc]
|
| Part No. |
MTW35N15E
|
| OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is des...247AE
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate V... |
| Description |
TMOS POWER FET 35 AMPERES 150 VOLTS RDS(on) = 0.05 OHM
|
| File Size |
169.40K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
| Part No. |
MTW8N60E_D MTW8N60E MTW8N60E/D
|
| OCR Text |
...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole
N-Channel Enhancement-Mode Silicon Gate
This high voltage MOSFET uses a...247AE
Value 600 600 20 40 8.0 6.4 24 180 1.43 - 55 to 150 864 0.70 40 260
Unit Vdc Vdc Vdc V... |
| Description |
TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM
|
| File Size |
65.52K /
2 Page |
View
it Online |
Download Datasheet |
|
For
to-247ae Found Datasheets File :: 69 Search Time::1.563ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | <7> | |
▲Up To
Search▲ |
|
Price and Availability
|
