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  to-247ae Datasheet PDF File

For to-247ae Found Datasheets File :: 69    Search Time::1.75ms    
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    MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTW7N80E_D ON2703 MTW7N80E
OCR Text ...M Power Field Effect Transistor TO-247 With Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses a...247AE Value 800 800 20 40 7.0 5.1 21 180 1.43 - 55 to 150 661 0.70 62.5 260 Unit Vdc Vdc Vdc...
Description TMOS POWER FET 7.0 AMPERES 800 VOLTS RDS(on) = 1.0 OHM
From old datasheet system
File Size 221.10K  /  8 Page

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    ON Semi
Part No. MJW16010A ON2058
OCR Text ...Temperature Range TJ, Tstg - 55 to 150 CASE 340K-01 to-247ae THERMAL CHARACTERISTICS Characteristic Symbol RJC TL Max Unit Thermal Resistance, Junction to Case 0.92 275 _C/W _C Lead Temperature for Soldering Purp...
Description 1 kV SWITCHMODE Series
From old datasheet system
File Size 318.65K  /  10 Page

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    MJW16206 ON2059

ON Semiconductor
Part No. MJW16206 ON2059
OCR Text ...re 19 Figure 20 CASE 340K-01 to-247ae Collector Current -- Continuous Collector Current -- Pulsed (1) Base Current -- Continuous Base Current -- Pulsed (1) IC ICM IB IBM 12 15 Adc Adc 5.0 10 0.2 Repetitive Emitter-Base ...
Description POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, to-247ae
High and Very High Resolution CRT Monitors
From old datasheet system
File Size 306.88K  /  10 Page

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    MTW6N100E MTW6N100E_D ON2701 MTW6N100

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTW6N100E MTW6N100E_D ON2701 MTW6N100
OCR Text ...M Power Field Effect Transistor TO-247 With Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses a...247AE Value 1000 1000 20 40 6.0 4.2 18 180 1.43 - 55 to 150 720 0.70 40 260 Unit Vdc Vdc Vdc...
Description From old datasheet system
TMOS POWER FET 6.0 AMPERES 1000 VOLTS RDS(on) = 1.5 OHM
File Size 195.50K  /  8 Page

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    MTW24N40E MTW24N40E_D ON2687

MOTOROLA[Motorola, Inc]
ON Semi
Part No. MTW24N40E MTW24N40E_D ON2687
OCR Text ...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses a...247AE Value 400 400 20 40 24 17.7 72 250 2.0 - 55 to 150 600 0.50 40 260 Unit Vdc Vdc Vdc Vp...
Description From old datasheet system
TMOS POWER FET 24 AMPERES 400 VOLTS RDS(on) = 0.16 OHM
File Size 175.05K  /  8 Page

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    MUR3020WT MUR3040WT MUR3060WT ON2736 MUR3060 MUR3020

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MOTOROLA[Motorola, Inc]
MOTOROLA[Motorola Inc]
ON Semi
Part No. MUR3020WT MUR3040WT MUR3060WT ON2736 MUR3060 MUR3020
OCR Text ...ng Junction Temperature Popular TO-247 Package High Voltage Capability to 600 Volts Low Forward Drop Low Leakage Specified @ 150C Case Tempe...247AE MUR3040WT 400 MUR3060WT 600 Unit Volts 15 30 30 150 Amps Amps Amps TJ, Tstg ...
Description From old datasheet system
(MUR3020WT - MUR3060WT) ULTRAFAST RECTIFIERS 30 AMPERES 200-400-600 VOLTS
File Size 101.83K  /  6 Page

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    MTW32N20E MTW32N20E_D ON2691

Motorola, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
Part No. MTW32N20E MTW32N20E_D ON2691
OCR Text ...M Power Field Effect Transistor TO-247 with Isolated Mounting Hole N-Channel Enhancement-Mode Silicon Gate This advanced TMOS E-FET is des...247AE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-Source Voltage Drain-Gate V...
Description TMOS POWER FET 32 AMPERES 200 VOLTS RDS(on) = 0.075 OHM
From old datasheet system
File Size 205.45K  /  8 Page

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    MJ16018 MJW16018 ON1986

MOTOROLA[Motorola, Inc]
ON Semiconductor
Motorola Mobility Holdings, Inc.
Part No. MJ16018 MJW16018 ON1986
OCR Text ...Temperature Range TJ, Tstg - 65 to 200 - 55 to 150 CASE 1-07 TO-204AA MJ16018 _C THERMAL CHARACTERISTICS Characteristic Symbol ...247AE MJW16018 (1) Pulse Test: Pulse Width = 5 s, Duty Cycle v 10%. Designer's Data for "Wo...
Description Power 10A 800V NPN
From old datasheet system
NPN Silicon Power Transistors
POWER TRANSISTORS 10 AMPERES 800 VOLTS 125 AND 175 WATTS 10 A, 800 V, NPN, Si, POWER TRANSISTOR, to-247ae
File Size 366.44K  /  8 Page

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