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  mesh Datasheet PDF File

For mesh Found Datasheets File :: 1044    Search Time::1.046ms    
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    STD2NB60 STD2NB60T4 STD2NB60-1

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STD2NB60 STD2NB60T4 STD2NB60-1
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination ...
Description N-CHANNEL ENHANCEMENT MODE POWERmesh MOSFET
N - CHANNEL ENHANCEMENT MODE Powermesh MOSFET
N-CHANNEL ENHANCEMENT MODE POWERmesh MOSFET

File Size 290.07K  /  9 Page

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    STD2NB80 6424 STD2NB80T4

SGS Thomson Microelectronics
ST Microelectronics
意法半导
STMicroelectronics N.V.
Part No. STD2NB80 6424 STD2NB80T4
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description From old datasheet system
N-CHANNEL MOSFET
N - CHANNEL 800V - 4.6 ohm - 1.9A - IPAK/DPAK Powermesh MOSFET
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 1.9A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 800V的五(巴西)直| 1.9AI(四)|52AA

File Size 91.06K  /  9 Page

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    STD3NC50

意法半导
STMicroelectronics
Part No. STD3NC50
OCR Text ...tion of the first generation of mesh OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPL...
Description N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowermeshII MOSFET

File Size 54.85K  /  7 Page

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    STD3NC60 STD3NC60-1

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. STD3NC60 STD3NC60-1
OCR Text ...tion of the first generation of mesh OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLIC...
Description N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK Powermesh⑩II MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK PowermeshII MOSFET
N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK Powermesh?II MOSFET

File Size 459.28K  /  10 Page

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    SAA5261 SAA5261PS SAA5262 SAA5262PS SAA5263 SAA5263PS

PHILIPS[Philips Semiconductors]
Part No. SAA5261 SAA5261PS SAA5262 SAA5262PS SAA5263 SAA5263PS
OCR Text ...ial data input/output (I2C-bus) mesh 8/30 and time displays input: HIGH will select a meshed display for the packet 8/30 and time East/West language select input: LOW selects West language 1998 Apr 22 6 Philips Semiconductors Pr...
Description 10-page intelligent teletext decoders

File Size 349.36K  /  28 Page

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    STB10NB20 6319

STMICROELECTRONICS[STMicroelectronics]
Part No. STB10NB20 6319
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronis has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termin...
Description From old datasheet system
N - CHANNEL 200V - 0.30ohm - 10A - D2PAK Powermesh] MOSFET

File Size 81.92K  /  8 Page

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    STB10NB50 6520

STMICROELECTRONICS[STMicroelectronics]
Part No. STB10NB50 6520
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description From old datasheet system
N - CHANNEL 500V - 0.55 - 10.6A - D 2 PAK Powermesh TM MOSFET
N - CHANNEL 500V - 0.55ohm - 10.6A - D2PAK Powermesh] MOSFET

File Size 83.90K  /  8 Page

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    STB10NC50-1

STMICROELECTRONICS[STMicroelectronics]
Part No. STB10NC50-1
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N - CHANNEL 500V - 0.48ohm - 10A - I2PAK/D2PAK Powermesh] MOSFET

File Size 54.88K  /  7 Page

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    STD1NB50

http://
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STD1NB50
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N - CHANNEL 500V - 7.5ohm - 1.4A IPAK Powermesh MOSFET
N-CHANNEL POWER MOSFET

File Size 86.41K  /  8 Page

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    STD1NB60

http://
STMicroelectronics
SGS Thomson Microelectronics
Part No. STD1NB60
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N - CHANNEL 600V - 7.4ohm - 1A - IPAK/DPAK Powermesh MOSFET

File Size 65.58K  /  6 Page

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For mesh Found Datasheets File :: 1044    Search Time::1.046ms    
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