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  mesh Datasheet PDF File

For mesh Found Datasheets File :: 1066    Search Time::2.172ms    
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    STB11NB40 5418

STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
Part No. STB11NB40 5418
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination ...
Description N-Channel Enhancement Mode PowermeshTM MOSFET(N沟道增强模式MOSFET) N沟道增强模式PowermeshTM MOSFET的(不适用沟道增强模式MOSFET的)
N - CHANNEL ENHANCEMENT MODE Powermesh MOSFET
From old datasheet system

File Size 101.13K  /  9 Page

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    STE110NS20FD

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. STE110NS20FD
OCR Text mesh OVERLAYTM Power MOSFET TYPE STE110NS20FD n n n n n n n VDSS 200V RDS(on) < 0.024 ID 110 A TYPICAL RDS(on) = 0.022 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 20V GATE TO SOURCE VOLTAGE RAT...
Description N-CHANNEL 200V 0.022 OHM 110A ISOTOP mesh OVERLAY MOSFET
N-CHANNEL 200V - 0.022W - 110A ISOTOP mesh OVERLAY Power MOSFET
N-CHANNEL 200V - 0.022W - 110A ISOTOP mesh OVERLAY⑩ Power MOSFET

File Size 276.58K  /  8 Page

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    STE53NC50

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STE53NC50
OCR Text ...tion of the first generation of mesh OVERLAYTM. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ISO...
Description N-CHANNEL 500V - 0.070ohm - 53A ISOTOP Powermesh?II MOSFET
N-CHANNEL 500V - 0.070ohm - 53A ISOTOP Powermesh⑩II MOSFET
N-CHANNEL 500V - 0.070ohm - 53A ISOTOP PowermeshII MOSFET

File Size 274.38K  /  8 Page

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    STB3NB60 5982

STMicroelectronics
Part No. STB3NB60 5982
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination ...
Description From old datasheet system
N - CHANNEL 600V - 3.3ohm - 3.3A - D2PAK/I2PAK Powermesh MOSFET

File Size 90.97K  /  9 Page

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    STB3NC60 STB3NC60T4 STB3NC60-1

SGS Thomson Microelectronics
STMicroelectronics
意法半导
Part No. STB3NC60 STB3NC60T4 STB3NC60-1
OCR Text ...tion of the first generation of mesh OVERLAYTM . The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns switching speed, gate charge and ruggedness. APPL...
Description TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK Powermesh II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowermeshII MOSFET

File Size 93.20K  /  9 Page

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    STB3NC90Z-1 STP3NC90ZFP STP3NC90Z

STMICROELECTRONICS[STMicroelectronics]
Part No. STB3NC90Z-1 STP3NC90ZFP STP3NC90Z
OCR Text ...RIPTION The third generation of mesh OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capabil...
Description N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected Powermesh?III MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowermeshIII MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected Powermesh⑩III MOSFET

File Size 333.77K  /  11 Page

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    STB3NC90 STB3NC90Z

STMICROELECTRONICS[STMicroelectronics]
Part No. STB3NC90 STB3NC90Z
OCR Text ...RIPTION The third generation of mesh OVERLAYTM Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capabil...
Description N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected Powermesh?III MOSFET
N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected PowermeshIII MOSFET
N-CHANNEL 900V - 3.2W - 3.5A D2PAK Zener-Protected Powermesh⑩III MOSFET

File Size 417.54K  /  9 Page

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    STB5NB60

STMICROELECTRONICS[STMicroelectronics]
Part No. STB5NB60
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK Powermesh MOSFET

File Size 92.07K  /  9 Page

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    STB5NB80 6521

STMICROELECTRONICS[STMicroelectronics]
Part No. STB5NB80 6521
OCR Text ...N Using the latest high voltage mesh OVERLAYTM process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termi...
Description From old datasheet system
N - CHANNEL 800V - 1.8ohm - 5A -D2PAK Powermesh] MOSFET

File Size 86.36K  /  8 Page

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For mesh Found Datasheets File :: 1066    Search Time::2.172ms    
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