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hetero Datasheet PDF File

For hetero Found Datasheets File :: 348 Search Time::1.266ms
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				NEC[NEC]
Part No.	NE23300
OCR Text	... DESCRIPTION The NE23300 is a hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. Its excellent low noise figure a...
Description	SUPER LOW NOISE HJ FET (SPACE QUALIFIED)
File Size	53.48K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE24200_00 NE24200
OCR Text	... The NE24200 is a pseudomorphic hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom sh...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (SPACE QUALIFIED)
File Size	42.62K / 4 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE32400_98 NE32400 NE3240098 NE32400M NE32400N
OCR Text	... The NE32400 is a pseudomorphic hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to create a two-dimensional electron gas layer with very high electron mobility. This device features mushroom sh...
Description	Ultra low noise pseudomorphic HJ FET. IDSS range 45-70 mA.
File Size	49.30K / 5 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE32484A_98 NE32484A NE32484AS NE32484A-T1 NE32484A98
OCR Text	...The NE32484A is a pseudomorphic hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and i...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
File Size	51.75K / 5 Page	View it Online	Download Datasheet

				CEL[California Eastern Labs]
Part No.	NE32500N NE32500 NE32500M
OCR Text	...DESCRIPTION NEC's NE32500 is a hetero-Junction FET chip that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for ...
Description	C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
File Size	79.64K / 3 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE32584C_98 NE32584C NE32584C-S NE32584C-T1 NE32584C98
OCR Text	...The NE32584C is a pseudomorphic hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and i...
Description	ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
File Size	50.69K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE325S01_02 NE325S01 NE325S01-T1 NE325S01-T1B NE325S0102
OCR Text	...14 20 4 30 The NE325S01 is a hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise figure and high associated gain make it suitable for comme...
Description	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
File Size	48.24K / 5 Page	View it Online	Download Datasheet

				California Eastern Labs NEC[NEC]
Part No.	NE33284A_98 NE33284A NE33284AS NE33284A-T1 NE33284A98 NE33284
OCR Text	... DESCRIPTION The NE33284A is a hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and i...
Description	SUPER LOW NOISE HJ FET
File Size	49.51K / 5 Page	View it Online	Download Datasheet

				California Eastern Labs NEC[NEC]
Part No.	NE334S01_00 NE334S01 NE334S01-T1 NE334S01-T1B NE334S01-T1-A NE334S0100
OCR Text	... DESCRIPTION The NE334S01 is a hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. Its excellent low noise and high associated gain make it suitable for TVRO and oth...
Description	C BAND SUPER LOW NOISE HJ FET
File Size	42.40K / 6 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	NE38018_00 NE38018 NE38018-TI-67 NE38018-TI-68
OCR Text	... is a low cost gallium arsenide hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low nois...
Description	GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
File Size	63.98K / 9 Page	View it Online	Download Datasheet

For hetero Found Datasheets File :: 348 Search Time::1.266ms
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