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  hetero Datasheet PDF File

For hetero Found Datasheets File :: 348    Search Time::2.859ms    
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    TSHG8200

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Vishay Siliconix
Part No. TSHG8200
OCR Text hetero FEATURES * * * * * * * * * * * * * Package type: leaded Package form: T-13/4 Dimensions (in mm): 5 Peak wavelength: p = 830 nm High reliability High radiant power High radiant intensity Angle of half intensity: = 10 Low forward ...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double hetero

File Size 105.73K  /  5 Page

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    TSHG8400

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Vishay Siliconix
Part No. TSHG8400
OCR Text hetero FEATURES * Package type: leaded * Package form: T-13/4 * Dimensions (in mm): 5 * Peak wavelength: p = 830 nm * High reliability * High radiant power * High radiant intensity 94 8389 * Angle of half intensity: = 22 * Low forw...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double hetero

File Size 105.82K  /  5 Page

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    TSSF4500 TSSF450008

Vishay Siliconix
Part No. TSSF4500 TSSF450008
OCR Text hetero FEATURES * Package type: leaded * Package form: side view * Dimensions (L x W x H in mm): 4.5 x 4 x 4.8 * Peak wavelength: p = 890 nm * High reliability * High radiant power * High radiant intensity * Angle of half intensity: = 2...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double hetero

File Size 87.34K  /  5 Page

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    TSFF5210-09

Vishay Siliconix
Part No. TSFF5210-09
OCR Text ...ng diode, 870 nm, gaalas double hetero tsff5210 vishay semiconductors description tsff5210 is an infrared, 870 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted p...
Description High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double hetero

File Size 107.21K  /  5 Page

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    NEC Corp.
NEC[NEC]
Part No. NE434S01 NE434S01-T1B NE434S01-T1
OCR Text hetero JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent ...
Description C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

File Size 75.30K  /  12 Page

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    Vishay
Part No. TLDR5400
OCR Text hetero red Type TLDR5400 Technology GaAlAs on GaAs Angle of Half Intensity o 30 Description This LED contains the double heterojunction (DH) GaAlAs on GaAs technology. This deep red LED can be utilized over a wide range of drive current...
Description High Intensity LED, ? 5 mm Tinted Diffused
From old datasheet system

File Size 77.14K  /  6 Page

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    VSMB3940X01

Vishay Siliconix
Part No. VSMB3940X01
OCR Text ...g diode , 940 nm, gaalas double hetero vsmb3940x01 vishay semiconductors description vsmb3940x01 is an infrared, 940 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a plcc-2 pack...
Description High Speed Infrared Emitting Diode, 940 nm, GaAlAs Double hetero

File Size 146.62K  /  6 Page

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    VSMF3710 VSMF3710-GS08 VSMF3710-GS18 VSMF371008

Vishay Siliconix
Part No. VSMF3710 VSMF3710-GS08 VSMF3710-GS18 VSMF371008
OCR Text hetero FEATURES * Package type: surface mount * Package form: PLCC-2 * Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 * Peak wavelength: p = 890 nm * High reliability * High radiant power * High radiant intensity 94 8553 * Angle of ha...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double hetero

File Size 132.58K  /  6 Page

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    TSHG5510

Vishay Siliconix
Part No. TSHG5510
OCR Text ...ng diode, 830 nm, gaalas double hetero tshg5510 vishay semiconductors description tshg5510 is an infrared, 830 nm emitting diode in gaalas double hetero (dh) technology with high radiant power and high speed, molded in a clear, untinted p...
Description High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double hetero

File Size 100.50K  /  5 Page

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    VSMF4710-GS08 VSMF4710-GS18 VSMF4710

Vishay Siliconix
Part No. VSMF4710-GS08 VSMF4710-GS18 VSMF4710
OCR Text hetero FEATURES * Package type: surface mount * Package form: PLCC-2 * Dimensions (L x W x H in mm): 3.5 x 2.8 x 1.75 * Peak wavelength: p = 870 nm * High reliability * High radiant power 94 8553 * High radiant intensity * Angle of ha...
Description High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double hetero

File Size 132.55K  /  6 Page

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