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2SC39 090814 C8051F SFR151 MBR0520 AD859708 ATMEGA16 LBN7009L
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  dv dt Datasheet PDF File

For dv dt Found Datasheets File :: 28579    Search Time::2.125ms    
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    IRKU56

International Rectifier
Part No. IRKU56
OCR Text ...to 125 0.1 5 (5) available with dv/dt = 1000v/ s, to complete code add s90 i.e. irku41/16as90. a mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of t...
Description ADD-A-pakTM GEN V Power Modules

File Size 212.06K  /  9 Page

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    STD7N52K3 STB7N52K3

STMicroelectronics
Part No. STD7N52K3 STB7N52K3
OCR Text ...valanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitances improved diode reverse recovery characteristics zener-protected application switching applications description the new supermesh3? ...
Description N-channel Power MOSFET

File Size 403.10K  /  15 Page

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    2SK3505-01MR

Fuji Electric
Part No. 2SK3505-01MR
OCR Text ... as *1 183 maximum drain-source dv/dt dv ds /dt *4 20 peak diode recovery dv/dt dv/dt *3 5 max. power dissipation p d ta=25 c 2.16 tc=25 c 80 operating and storage t ch +150 temperature range t stg isolation voltage vi so...
Description N-CHANNEL SILICON POWER MOSFET

File Size 98.85K  /  4 Page

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    IRF5210STRL IRF5210STRR IRF5210L

International Rectifier
Part No. IRF5210STRL IRF5210STRR IRF5210L
OCR Text ...titive avalanche energy ? 20 mj dv/dt peak diode recovery dv/dt ?? -5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c irf5210s/l ? starting ...
Description -100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-100V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 194.50K  /  10 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ...ved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN 1001) l D2Pak IRF840AS TO-262 IRF840AL Absolute Maximum Ratings Parameter ID...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ...ved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss Specified (See AN1001) l VDSS 500V Rds(on) max 0.85 ID 8.0A TO-220AB G DS Absolute M...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ... 100% avalanche tested Improved dv/dt capability D G GDS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise not...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF840LCL IRF840LCS

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840LCL IRF840LCS
OCR Text ...5C PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avala...
Description Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A)

File Size 169.91K  /  10 Page

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    IPW90R1K2C3

Infineon Technologies AG
Part No. IPW90R1K2C3
OCR Text dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications ? pb-free lead plating; rohs compliant ? ultra low gate charge coolmos? 900v is designed for: ? quasi resonant flyback / forward topologi...
Description CoolMOS?/a> Power Transistor

File Size 552.25K  /  11 Page

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    IRF9230 JANTXV2N6806 JANTX2N6806

IRF[International Rectifier]
Part No. IRF9230 JANTXV2N6806 JANTX2N6806
OCR Text dv/dt RATED V JANTX2N6806 HEXFET TRANSISTORS JANTXV2N6806 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/562] 200V, P-CHANNEL Product Summary Part Number IRF9230 BVDSS -200V RDS(on) 0.80 ID -6.5A The HEXFETtechnology is the key to Intern...
Description TRANSISTORS P-CHANNEL(Vdss=-200V, Rds(on)=0.80ohm, Id=-6.5A)
CAP CER 250VAC 82PF 5% SL 1808
6.5 A, 200 V, 0.92 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 148.64K  /  7 Page

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