Part Number Hot Search : 
SG2524D 1V221M B1184 1N4946 LMR12WD TES200 1N111 EDI8M
Product Description
Full Text Search
  dv dt Datasheet PDF File

For dv dt Found Datasheets File :: 28218    Search Time::1.547ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

    CD471290 CD420890 CD421690 CD471690 CD4290 CD421290 CD470890

Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
http://
Powerex Power Semicondu...
Part No. CD471290 CD420890 CD421690 CD471690 CD4290 CD421290 CD470890
OCR Text ... B Ln I +C I + D Sqrt I Minimum dv/dt Turn-Off Time (Typical) dv/dt t off Linear to 2/3 VDRM Tj=125C, Gate Open Circuit TJ = 25C, IT = 2A Vr = 50V, -dI/dt=10 A/s Re-Applied dv/dt = 200 V/s, Linear to 900 V Tj= -40C, VD=6V, Resistive Load Tj...
Description    POW-R-BLOK Dual SCR/Diode Isolated Module 90 Amperes / Up to 1600 Volts
R8C Series, R8C/33A Group, WdtO 32P6U-A; Vcc= 1.8 to 5.5 volts, Temp= -20 to 85 C, dataflash; Package: PLQP0052JA-A 140 A, 1600 V, SCR

File Size 101.94K  /  4 Page

View it Online

Download Datasheet





    TK12V60W

Toshiba Semiconductor
Part No. TK12V60W
OCR Text ...ing time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v d...
Description MOSFETs
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 245.97K  /  10 Page

View it Online

Download Datasheet

    TK10E60W

Toshiba Semiconductor
Part No. TK10E60W
OCR Text ...ing time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v d...
Description Switching Voltage Regulators

File Size 252.53K  /  10 Page

View it Online

Download Datasheet

    TK10E60W

Toshiba Semiconductor
Part No. TK10E60W
OCR Text ...ing time (turn-off time) mosfet dv/dt ruggedness symbol c iss c rss c oss c o(er) r g t r t on t f t off dv/dt test condition v ds = 300 v, v gs = 0 v, f = 1 mhz v ds = 0 to 400 v, v gs = 0 v v ds = open, f = 1 mhz see figure 6.2.1 v d...
Description MOSFETs
Power MOSFET (N-ch 500V<VDSS≤700V)

File Size 252.81K  /  10 Page

View it Online

Download Datasheet

    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWF7N65
OCR Text ...e charge ( typ 35 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such a...
Description N-channel MOSFET

File Size 771.85K  /  7 Page

View it Online

Download Datasheet

    Xian Semipower Electronic Technology Co., Ltd.
Part No. SWF7N60A
OCR Text ...e charge ( typ 38 nc) improved dv/dt capability 100% avalanche tested general description this power mosfet is produced with advanced vdmos technology of samwin . this technology enable power mosfet to have better characteristics, such a...
Description N-channel MOSFET

File Size 718.37K  /  7 Page

View it Online

Download Datasheet

    FAIRCHILD SEMICONDUCTOR CORP
Part No. SFU2955TU
OCR Text ... peak diode recovery dv/dt total power dissipation (t a =25 o c) total power dissipation (t c =25 o c) linear derating factor operating junction and storage temperature range maximum lead temp. for ...
Description 7.6 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 306.39K  /  9 Page

View it Online

Download Datasheet

    IPA65R225C7

Infineon Technologies AG
Part No. IPA65R225C7
OCR Text ...ty. features ?increasedmosfetdv/dtruggedness ?betterefficiencyduetobestinclassfomr ds(on) *e oss andr ds(on) *q g ?bestinclassr ds(on) /package ?easytouse/drive ?pb-freeplating,halogenfreemoldcompound ?qualifie...
Description high power thyristor diode

File Size 1,730.63K  /  15 Page

View it Online

Download Datasheet

    FCB20N60 FCB20N60TM

FAIRCHILD[Fairchild Semiconductor]
Part No. FCB20N60 FCB20N60TM
OCR Text ...formance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D D ! " ...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 611.95K  /  8 Page

View it Online

Download Datasheet

    FCP20N60 FCPF20N60

Fairchild Semiconductor
Part No. FCP20N60 FCPF20N60
OCR Text ...formance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency. D ! " G...
Description 600V N-Channel SuperFET
600V N-Channel MOSFET

File Size 855.17K  /  10 Page

View it Online

Download Datasheet

For dv dt Found Datasheets File :: 28218    Search Time::1.547ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of dv dt

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
1.8605082035065