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  58a Datasheet PDF File

For 58a Found Datasheets File :: 16262    Search Time::5.5ms    
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    SSD12P10 SSD12P10-15

SeCoS Halbleitertechnologie GmbH
SeCoS Halbleitertechnol...
Part No. SSD12P10 SSD12P10-15
OCR Text ...tance junction- case r jc 3.5 c / w maximum thermal resistance junction-ambient r ja 110 c / w date code millimet...8a gate-source leakage current i gss - - 100 na v gs = 32v drain-source leakage current (t j =2...
Description P-Channel Enhancement MOSFET

File Size 430.35K  /  4 Page

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    IRHLG73214 IRHLG77214 2N7614M1

International Rectifier
Part No. IRHLG73214 IRHLG77214 2N7614M1
OCR Text ...100c continuous drain current 0.5 i dm pulsed drain current 3.2 p d @ t c = 25c max. power dissipation 1.4 w linear derating factor 0....8a irhlg73214 300k rads (si) 1.1 ? 0.8a for footnotes refer to the last page pre-ir...
Description RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE

File Size 200.08K  /  9 Page

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    AP4813GSM-HF AP4813GSM-HF-14

Advanced Power Electronics Corp.
Advanced Power Electronics ...
Part No. AP4813GSM-HF AP4813GSM-HF-14
OCR Text ...ax power dissipation (mosfet) 2.5 thermal data advanced power mosfets from apec provide the designer with the best combination of fast switc...8a - - 15 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transcond...
Description Simple Drive Requirement, Good Recovery Time

File Size 99.41K  /  4 Page

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    AP18P10GI

Advanced Power Electronics Corp.
Part No. AP18P10GI
OCR Text ...n temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode ...8a t c =25 : 0 10 20 30 40 048121620 -v ds , drain-to-source voltage (v) -i d , drain current (...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 149.68K  /  5 Page

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    MURATA MANUFACTURING CO LTD
Part No. AN8720R7D2M PLY10AN1130R5D2B PLY10AN2821R2R2B PLY10AN1430R5R2B
OCR Text ...ilters > hybrid choke coils 17.5 max. 18 max. 13 0.5 10 0.5 16 max. ? 0.9 max. (in mm) 3.5 1 (4) [(1)] (3) [(2)] (4) [(3)] (1) [(2)] 0.1...8a 300vac ply10an1521r6r2 p 1.5mh 110 h 1.6a 300vac ply10an2121r4r2 p 2.1mh 150 h 1.4a 300vac ply1...
Description 300 V, SINGLE PHASE EMI FILTER

File Size 69.67K  /  3 Page

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    NB639DL

Monolithic Power Systems
Part No. NB639DL
OCR Text ...ge reference top view 1 2 3 4 5 6 16 15 14 13 12 agnd freq fb ss en pgood pgnd pgnd pgnd pgnd pgnd pgnd sw sw bst exposed pad on backside in sw sw vcc in in in in sw sw 78910 11 20 19 18 17 absolute maxi mum ratings (1) supply voltag...
Description High Efficiency, Fast Transient, 8A, 28V Synchronous Step-down Converter In a Tiny QFN20 (3x4mm) Package

File Size 859.50K  /  19 Page

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    NB6381 NB6381DL NB6381DL-LF-Z

Monolithic Power Systems
MPS Industries, Inc.
Part No. NB6381 NB6381DL NB6381DL-LF-Z
OCR Text ...s, inc. typical application 5 4 3 2 7 9,10,17,18 1 20 8,19 11-16 in vcc pgood freq en pgnd agnd ss sw fb bst r7 c ss 33nf c4 220pf nb638...8a shutdown through en i out =0a shutdown through en i out =8a en 10v/div i l 2a/div v out 500mv/di...
Description High Efficiency, Fast Transient, 8A, 28V Synchronous Step-down Converter in a Tiny QFN20 (3x4mm) Package

File Size 738.44K  /  19 Page

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    TY Semiconductor Co., Ltd
Part No. KRF7325
OCR Text 5,6: drain 2 features trench technology ultra low on-resistance dual p-channel mosfet low profile (<1.8mm) available in tape & reel absolute...8a*1 24 v gs =-2.5v,i d = -6.2a*1 33 v gs =-1.8v,i d = -3.9a*1 49 gate threshold voltage v gs(th) v ...
Description Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET

File Size 117.22K  /  2 Page

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    IRF7389 IRF7389TR

IRF[International Rectifier]
Part No. IRF7389 IRF7389TR
OCR Text ...30V 2 7 3 6 4 5 P-CHANNEL MOSFET RDS(on) 0.029 0.058 Description Fifth Generation HEXFETs from International Rec...8A VGS = 4.5V, ID = 4.7A VGS = -10V, ID = -4.9A VGS = -4.5V, ID = -3.6A VDS = VGS, I D = 250A VD...
Description Generation v technology
30V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package

File Size 210.72K  /  10 Page

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