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Renesas Electronics Corporation
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| Part No. |
FL14KM-8A FL14KM-8A-15
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| OCR Text |
...its, software, or information. 5. when exporting the products or technology described in this document, you should comply with the applica...8a high-speed switching use sep. 2001 mitsubishi nch power mosfet fl14km-8a high-speed switching use... |
| Description |
14 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
HIGH-SPEED SWITCHING USE
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| File Size |
105.64K /
7 Page |
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Mitsubishi Electric Corporation
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| Part No. |
M5M4V64S30ATP-8A M5M4V64S30ATP-8L
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| OCR Text |
...4v64s30atp-8 100mhz 6ns 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35...8a,-8l,-8, -10l, -10 mar'98 sdram (rev.1.3) block diagram address buffer a0-11 ba0,1 control signal ... |
| Description |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
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| File Size |
1,164.25K /
51 Page |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FL14KM-8A
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| OCR Text |
...
15 0.3
f 3.2 0.2
14 0.5
3.6 0.3
1.1 0.2 1.1 0.2 0.75 0.15
6.5 0.3
3 0.3
0.75 0.15
2.54 0.25
2.54 0.2...8A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25C)
Symbol V (BR) DSS V (BR) GSS... |
| Description |
Power MOSFETs: FL Series
HIGH-SPEED SWITCHING USE
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| File Size |
63.65K /
4 Page |
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YENYO TECHNOLOGY Co., Ltd
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| Part No. |
MCR100-8A
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| OCR Text |
... (2) v b d b = 7v , i gt = 0.5 ma r gk =1k max. 5 ma i l v b d b = 7v , i gt = 0.5 ma r gk =1k max. 6 ma dv/dt (2) v b d b = 67 % v b drm b r gk =1k tj = 110 min. 50 v/us static characteristics symbol test... |
| Description |
Sensitive Gate / Silicon Controlled Rectifiers
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| File Size |
141.63K /
4 Page |
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Elpida Memory
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| Part No. |
EDJ1104BASE-8A-E EDJ1108BASE-8A-E EDJ1116BASE-8A-E EDJ1104BASE-8C-E EDJ1108BASE-8C-E EDJ1116BASE-8C-E EDJ1104BASE-AC-E EDJ1108BASE-AC-E EDJ1116BASE-AC-E EDJ1104BASE-AE-E EDJ1108BASE-AE-E EDJ1116BASE-AE-E EDJ1104BASE-AG-E EDJ1108BASE-AG-E EDJ1116BASE-AG-E EDJ1104BASE-DG-E EDJ1108BASE-DG-E EDJ1116BASE-DG-E EDJ1104BASE-DJ-E EDJ1108BASE-DJ-E EDJ1116BASE-DJ-E EDJ1108BASE-GL-E EDJ1108BASE-GN-E EDJ1108BASE EDJ1116BASE EDJ1104BASE
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| OCR Text |
...4 with BC) * /CAS Latency (CL): 5, 6, 7, 8, 9, 10, 11 * /CAS Write Latency (CWL): 5, 6, 7, 8 * Precharge: auto precharge option for each bur...8A-E EDJ1104BASE-8C-E EDJ1108BASE-GL-E EDJ1108BASE-GN-E EDJ1108BASE-DG-E EDJ1108BASE-DJ-E EDJ1108BAS... |
| Description |
1G bits DDR3 SDRAM
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| File Size |
1,943.14K /
148 Page |
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Mitsubishi Electric Corporation
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| Part No. |
CR02AM-8A CR2AM-8A
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| OCR Text |
5.0 MAX 4.4
Dimensions in mm
2
VOLTAGE CLASS TYPE NAME
3 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
CIRCUMSCRIBE CIRCLE 0.7
...8A
LOW POWER USE
GLASS PASSIVATION TYPE
ELECTRICAL CHARACTERISTICS
Symbol IRRM IDRM VTM VGT VG... |
| Description |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE GLASS PASSIVATION TYPE
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| File Size |
74.39K /
5 Page |
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Price and Availability
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