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hetero Datasheet PDF File

For hetero Found Datasheets File :: 348 Search Time::1.36ms
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				KODENSHI KOREA CORP.
Part No.	KLT-231444
OCR Text	...d MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with flat window or ball lens or aspherical lens cap High reliability and environmental endurance Operating wavelength of 1.3 m band Operating temp...
Description	1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
File Size	213.55K / 2 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	CGD942C
OCR Text	...voltage of 24 V (DC), employing hetero Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output ...
Description	870 MHz, 23 dB gain power doubler amplifier
File Size	81.71K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	CGD944C
OCR Text	...voltage of 24 V (DC), employing hetero Field Effect Transistor (HFET) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output ...
Description	870 MHz, 25 dB gain power doubler amplifier
File Size	81.65K / 7 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc.
Part No.	MASW-000552-13210G
OCR Text	... state M/A-COM's unique AlGaAs hetero-junction Rev. V4 anode technology. Silicon Nitride Passivation Polymer Scratch protection Yellow areas indicate bond pads DESCRIPTION M/A-COM's MA4AGSW2 is an Aluminum-GalliumArsenide, sin...
Description	SPDT AlGaAs PIN Diode Switch RoHS Compliant
File Size	101.13K / 7 Page	View it Online	Download Datasheet

				M/A-COM Technology Solutions, Inc.
Part No.	MASW-000555-13570G
OCR Text	... state M/A-COM's unique AlGaAs hetero-junction Rev. V3 anode technology. Silicon Nitride Passivation Polymer Scratch protection DESCRIPTION M/A-COM's MA4AGSW5 is an Aluminum-GalliumArsenide, single pole, five throw (SP5T), PIN di...
Description	SP5T AlGaAs PIN Diode Switch RoHS Compliant
File Size	121.90K / 7 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix]
Part No.	TSFF5410
OCR Text	...iode in GaAlAs on GaAlAs double hetero (DH) technology, molded in a clear, untinted plastic package. DH technology combines high speed with high radiant power at wavelength of 870 nm. Features * High modulation bandwidth (23 MHz) * Extr...
Description	High Speed IR Emitting Diode in 5 mm (T-1 3 /4) Package
File Size	124.93K / 5 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	KLT231544
OCR Text	...d MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with flat window or ball lens or aspherical lens cap High reliability and environmental endurance Operating wavelength of 1.3m band Operating tempe...
Description	1310nm InGaAsP strained MQW DFB-LD
File Size	108.11K / 2 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	TSHA550
OCR Text	hetero Description The TSHA550. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity ...
Description	High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double hetero
File Size	135.79K / 7 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	KLT-131451S
OCR Text	...d MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with O1.5mm ball lens cap High reliability and environmental endurance Operating wavelength of 1.3m band Wide operating temperature range from -40 ...
Description	1310nm InGaAsP strained MQW for FP-LD 1.5mm ball lens TO CAN
File Size	161.22K / 2 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	KLT-131452
OCR Text	...d MQW InGaAsP LD with BH(buried hetero-junction) structure Hermetically sealed TO-56 package with O2.0mm ball lens cap High reliability and environmental endurance Operating wavelength of 1.3m band Wide operating temperature range from -40 ...
Description	1310nm InGaAsP strained MQW for FP-LD 2mm ball lens TO CAN
File Size	163.50K / 2 Page	View it Online	Download Datasheet

For hetero Found Datasheets File :: 348 Search Time::1.36ms
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