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| 8M x 72-Bit Dynamic RAM Module (ECC - Module) HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information * * 8 388 608 words by 72-bit ECC - mode, one bank organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V 0.3 V supply Low power dissipation max. 4536 mW active (-50 version) max. 3888 mW active (-60 version) CMOS - 108 mW standby TTL - 180 mW standby * * * * * * * * * * * CAS-before-RAS refresh, RAS-only-refresh 9 decoupling capacitors mounted on substrate All inputs, outputs and clock fully LVTTL & LVCMOS compatible 4 Byte interleave enabled, Dual Address inputs (A0/B0) Buffered inputs excepts RAS and DQ 168 pin, dual read-out, Single in-Line Memory Module Utilizes nine 8M x 8 -DRAMs and four BiCMOS 8-bit buffers/line drivers VT244A Two versions: HYM 72V8010GS with SOJ-components ( 9 mm module thickness) HYM 72V8000GS with TSOPII-components ( 4 mm module thickness) 4048 refresh cycles / 64 ms with 12 / 11 addressing Gold contact pad Double sided module with 25.35 mm (1000 mil) height * * * Semiconductor Group 209 05.95 HYM72V8000/10GS-50/-60 8M x 72 ECC- Module The HYM 72V8000/10GS-50/-60 is a 64 MByte DRAM module organized as 8 388 608 words by 72bit in a 168-pin, dual read-out, single-in-line package comprising five HYB 3165800J/T 8M x 8 DRAMs in 500 mil wide SOJ or TSOPII - packages mounted together with nine 0.2 F ceramic decoupling capacitors on a PC board. All inputs except RAS and DQ are buffered by using four BiCMOS 8-bit buffers/line drivers. Each HYB 3165800J/T is described in the data sheet and is fully electrically tested and processed according to Siemens standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The density and speed of the module can be detected by the use of presence detect pins. Ordering Information Type HYM 72V8000GS-50 HYM 72V8000GS-60 HYM 72V8010GS-50 HYM 72V8010GS-60 Ordering Code on request on request on request on request Package L-DIM-168-4 L-DIM-168-4 L-DIM-168-4 L-DIM-168-4 Descriptions DRAM module (access time 50 ns) DRAM module (access time 60 ns) DRAM module (access time 50 ns) DRAM module (access time 60 ns) Pin Names A0-A12,B0 A0-A11,B0 DQ0 - DQ71 RAS0, RAS2 CAS0 , CAS2 WE0, WE2 OE0, OE2 Vcc Vss PD1 - PD8 PDE ID0 , ID1 N.C. Row Address Inputs Column Address Inputs Data Input/Output Row Address Strobe Column Address Strobe Read / Write Input Output Enable Power (+3.3 Volt) Ground Presence Detect Pins Presence Detect Enable ID indentification bit No Connection Presence-Detect and ID-pin Thruth Table: Module HYM 728000GS-50 HYM 728000GS-60 ID0 Vss Vss ID1 Vss Vss PD1 1 1 PD2 0 0 PD3 1 1 PD4 1 1 PD5 0 0 PD6 0 1 PD7 0 1 PD8 0 0 Note: 1 = High Level ( Driver Output) , 0 = Low Level (Driver Output) for PDE active ( ground) . For PDE at a high level all PD terminal are in tri-state. Semiconductor Group 210 HYM72V8000/10GS-50/-60 8M x 72 ECC- Module Pin Configuration PIN # 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 Symbol VSS DQ0 DQ1 DQ2 DQ3 VCC DQ4 DQ5 DQ6 DQ7 DQ8 VSS DQ9 DQ10 DQ11 DQ12 DQ13 VCC DQ14 DQ15 DQ16 DQ17 VSS NC NC VCC WE0 CAS0 NC RAS0 OE0 VSS A0 A2 A4 A6 A8 A10 NC VCC NC NC PIN # 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 Symbol VSS OE2 RAS2 CAS4 NC WE2 VCC NC NC DQ18 DQ19 VSS DQ20 DQ21 DQ22 DQ23 VCC DQ24 NC NC NC NC DQ25 DQ26 DQ27 VSS DQ28 DQ29 DQ30 DQ31 VCC DQ32 DQ33 DQ34 DQ35 VSS PD1 PD3 PD5 PD7 ID0 (VSS) VCC PIN # 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 Symbol VSS DQ36 DQ37 DQ38 DQ39 VCC DQ40 DQ41 DQ42 DQ43 DQ44 VSS DQ45 DQ46 DQ47 DQ48 DQ49 VCC DQ50 DQ51 DQ52 DQ53 VSS NC NC VCC NC NC NC NC NC VSS A1 A3 A5 A7 A9 A11 NC VCC NC B0 PIN # 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145 146 147 148 149 150 151 152 153 154 155 156 157 158 159 160 161 162 163 164 165 166 167 168 Symbol VSS NC NC NC NC PDE VCC NC NC DQ54 DQ55 VSS DQ56 DQ57 DQ58 DQ59 VCC DQ60 NC NC NC NC DQ61 DQ62 DQ63 VSS DQ64 DQ65 DQ66 DQ67 VCC DQ68 DQ69 DQ70 DQ71 VSS PD2 PD4 PD6 PD8 ID1 (VSS) VCC Semiconductor Group 211 HYM72V8000/10GS-50/-60 8M x 72 ECC- Module RAS0 CAS0 WE0 OE0 RAS2 CAS4 WE2 OE2 DQ0-DQ7 I/O1-I/O8 D0 DQ40-DQ47 I/O1-I/O8 D5 DQ8-DQ15 I/O1-I/O8 D1 DQ48-DQ55 I/O1-I/O8 D6 DQ16-DQ23 I/O1-I/O8 D2 DQ56-DQ63 I/O1-I/O8 D7 DQ24-DQ31 I/O1-I/O8 D3 DQ64-DQ71 I/O1-I/O8 D8 DQ32-DQ39 I/O1-I/O8 D4 A0 B0 A1-A11 D0 - D4 D5 - D8 D0 - D8 Vcc Vss D0-D8, buffers PDE Vcc or Vss PD1-PD8 Block Diagram Semiconductor Group 212 HYM72V8000/10GS-50/-60 8M x 72 ECC- Module Absolute Maximum Ratings Operating temperature range ......................................................................................... 0 to + 70 C Storage temperature range...................................................................................... - 55 to + 125 C Soldering temperature ............................................................................................................ 260 C Soldering time ............................................................................................................................. 10 s Input/output voltage ...............................................................................-0.5 to min (Vcc+0.5, 4.6) V Power supply voltage................................................................................................. - 0.5V to 4.6 V Power dissipation.................................................................................................................... 5,8 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics 1) TA = 0 to 70 C; VCC = 3.3 V 0.3 V Parameter Input high voltage Input low voltage Output high voltage (LVTTL) Output H" level voltage (IOUT = - 2 mA) Output low voltage (LVTTL) Output L" level voltage (IOUT = + 2 mA) Output high voltage (LVCMOS) Output H" level voltage (IOUT = - 100 A) Output low voltage (LVCMOS) Output L" level voltage (IOUT = + 100 A) Input leakage current (0 V < VIN < Vcc, all other pins = 0 V) Output leakage current (DO is disabled, 0 V < VOUT < Vcc) Symbol Limit Values min. max. Vcc + 0.3 V 0.8 - 0.4 - 0.2 20 20 V V V V V A A 2.0 - 0.3 2.4 - Vcc-0.2 - - 20 - 20 Unit Test Condition - - - - - - - - VIH VIL VOH VOL VOH VOL II(L) IO(L) ICC1 Average VCC supply current: HYM 72V8000/10GS-60 HYM 72V8000/10GS-70 (RAS, CAS, address cycling, tRC = tRC min.) Standby VCC supply current (RAS = CAS = VIH, one address change) - - 1260 1080 mA mA 2), 3) ICC2 - 50 mA - Semiconductor Group 213 HYM72V8000/10GS-50/-60 8M x 72 ECC- Module Parameter Symbol Limit Values min. max. Unit Test Condition 2) ICC3 Average VCC supply current during RAS only refresh cycles: HYM 72V8000/10GS-50 HYM 72V8000/10GS-60 (RAS cycling, CAS = VIH , tRC = tRC min.) Average VCC supply current during fast ICC4 page mode: HYM 72V8000/10GS-50 HYM 72V8000/10GS-60 (RAS = VIL, CAS, address cycling tPC = tPC min.) Standby VCC supply current (RAS = CAS = VCC - 0.2 V, one address change) - - 1260 1080 mA mA 2), 3) - - - 765 675 mA mA ICC5 - 30 mA - Average VCC supply current during ICC6 CAS-before-RAS refresh mode: HYM 72V8000/10GS-50 HYM 72V8000/10GS-60 (RAS, CAS cycling, tRC = tRC min.) Capacitance TA = 0 to 70 C; VCC = 3.3 V 0.3 V; f = 1 MHz Parameter Input capacitance (A0 to A11,B0) Input capacitance (RAS0, RAS2) Input capacitance (CAS0, CAS4) Input capacitance (WE0,WE2,OE0,OE2) I/O capacitance (DQ0-DQ71) 1) - - 1260 1080 mA mA Symbol min. Limit Values max. 10 50 15 15 15 - - - - - Unit pF pF pF pF pF CI1 CI2 CI3 CI4 CIO1 Semiconductor Group 214 HYM72V8000/10GS-50/-60 8M x 72 ECC- Module L-DIM-168-4 Module package (dual read-out, single in-line memory module) Semiconductor Group 215 VAKAT ((216)) |
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