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| DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor FEATURES * Low cost * High power gain. 1 DESCRIPTION The PMBTH10 is a general purpose silicon npn transistor, encapsulated in a SOT23 plastic envelope. Its pnp complement is the PMBTH81. 2 3 PINNING PIN base emitter collector 1 Top view PMBTH10 DESCRIPTION Code: V30 fpage 3 2 MSB003 Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL VCBO VCEO VEBO Ptot hFE Cre Crb fT rbCc PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage total power dissipation DC current gain collector-emitter feedback capacitance collector-base feedback capacitance transition frequency collector-base time constant open base open collector Ts = 45 C (note 1) VCE = 10 V; IC = 4 mA VCB = 10 V; IE = 0; f = 1 MHz VCB = 10 V; IE = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C CONDITIONS open emitter MIN. - - - - 60 - 0.35 650 - MAX. 30 25 3 400 - 0.7 0.65 - 9 pF pF MHz ps V V V mW UNIT LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VCBO VCEO VEBO IC Ptot Tstg Tj Note 1. Ts is the temperature at the soldering point of the collector tab. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage DC collector current total power dissipation storage temperature junction temperature Ts = 45 C (note 1) open base open collector CONDITIONS open emitter - - - - - -65 - MIN. MAX. 30 25 3 40 400 150 150 UNIT V V V mA mW C C September 1995 2 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor THERMAL RESISTANCE SYMBOL Rth j-s Note 1. Ts is the temperature at the soldering point of the collector tab. CHARACTERISTICS Tj = 25 C. SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO VCE sat VBE on ICBO IEBO hFE Cre Crb fT rbCc PARAMETER collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector-emitter saturation voltage base-emitter ON voltage collector-base cut-off current emitter-base cut-off current DC current gain collector-emitter feedback capacitance collector-base feedback capacitance transition frequency collector-base time constant CONDITIONS open emitter; IC = 100 A; IE = 0 open base; IC = 1 mA; IB = 0 open collector; IE = 10 A; IC = 0 IC = 4 mA; IB = 0.4 mA VCE = 10 V; IC = 4 mA VCB = 25 V; IE = 0 VCB = 25 V; IC = 0 VCE = 10 V; IC = 4 mA VCB = 10 V; IE = ie = 0; f = 1 MHz VCB = 10 V; IC = ic = 0; f = 1 MHz VCE = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C VCB = 10 V; IC = 4 mA; f = 100 MHz; Tamb = 25 C PARAMETER from junction to soldering point (note 1) PMBTH10 THERMAL RESISTANCE 260 K/W MIN. MAX. 30 25 3 - - - - 60 - 0.35 650 - - - - 0.5 0.95 100 100 - 0.7 0.65 - 9 UNIT V V V V V nA nA pF pF MHz ps September 1995 3 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 handbook, halfpage 100 Y11 MRA168 handbook, halfpage -10 b11 MRA170 (mS) 80 g11 60 -b11 40 (mS) -20 -30 1000 MHz -40 700 400 20 -50 200 100 0 102 f (MHz) 103 -60 0 20 40 60 80 100 g11 (mS) VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.2 Common base input admittance (Y11) as a function of frequency. Fig.3 Common base input admittance (Y11). handbook, halfpage 70 MRA169 Y21 (mS) handbook, halfpage 60 b21 MRA171 200 400 600 700 b21 (mS) 50 100 50 30 -g21 40 10 30 1000 MHz -10 20 -30 102 f (MHz) 103 10 -70 -50 -30 -10 10 30 g21 (mS) VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.4 Common base forward transfer admittance (Y21) as a function of frequency. Fig.5 Common base forward transfer admittance (Y21). September 1995 4 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PMBTH10 handbook, halfpage 5 MRA164 Y12 (mS) handbook, halfpage 0 MRA166 b12 (mS) 100 200 400 4 -1 3 -2 700 2 -b12 -3 1000 MHz 1 g12 f (MHz) 103 -4 0 102 -5 -2 -1.2 -0.4 0.4 1.2 2 g12 (mS) VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.6 Common base reverse transfer admittance (Y12) as a function of frequency. Fig.7 Common base reverse transfer admittance (Y12). handbook, halfpage 10 MRA165 Y22 (mS) handbook, halfpage 10 MRA167 b22 (mS) 1000 MHz 8 8 700 MHz 6 b22 4 6 4 400 MHz 200 MHz 2 g22 0 102 0 0 2 4 6 8 10 g22 (mS) 2 100 MHz f (MHz) 103 VCB = 10 V; IC = 4 mA. VCB = 10 V; IC = 4 mA. Fig.8 Common base reverse admittance (Y22) as a function of frequency. Fig.9 Common base reverse admittance (Y22). September 1995 5 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor PACKAGE OUTLINE Plastic surface mounted package; 3 leads PMBTH10 SOT23 D B E A X HE vMA 3 Q A A1 1 e1 e bp 2 wMB detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.9 A1 max. 0.1 bp 0.48 0.38 c 0.15 0.09 D 3.0 2.8 E 1.4 1.2 e 1.9 e1 0.95 HE 2.5 2.1 Lp 0.45 0.15 Q 0.55 0.45 v 0.2 w 0.1 OUTLINE VERSION SOT23 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-02-28 September 1995 6 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values PMBTH10 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. September 1995 7 |
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