| PART |
Description |
Maker |
| IXYA8N90C3D1 |
900V XPTTM IGBT
|
IXYS Corporation
|
| IXXH75N60C3D1 |
XPTTM 600V IGBT
|
IXYS Corporation
|
| IXYX50N170C |
High Voltage XPTTM IGBT
|
IXYS Corporation
|
| IXYH40N120B3D1 |
1200V XPTTM IGBT GenX3TM w/ Diode
|
IXYS Corporation
|
| IRGPF20F |
900V Discrete IGBT in a TO-3P (TO-247AC) package
|
International Rectifier
|
| STGW30N90D GW30N90D |
N-channel 900V - 30A - TO-247 Very fast PowerMESH IGBT N沟道900V - 30A47 IGBT的非常快速PowerMESH
|
STMicroelectronics N.V.
|
| IRFPF30 |
900V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
HEXFET? Power MOSFET
Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 3.7ohm，身份证\u003d 3.6A
|
International Rectifier, Corp.
|
| STU8NB90 6380 |
N-CHANNEL 900V - 0.7 Ohm - 8.9A - Max220 PowerMESH MOSFET
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN
N-CHANNEL 900V - 0.7 - 8.9A - Max220 PowerMESH TM MOSFET
N-CHANNEL 900V - 0.7ohm - 8.9A - Max220 PowerMESH MOSFET
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C)
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C)
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五（巴西）直| 9A条（丁）
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五（巴西）国际消费电子展| 50A条一（c
|
IXYS, Corp.
|
| FQI3N90 FQB3N90 FQB3N90TM FQI3N90TU |
900V N-Channel MOSFET(漏源电压900V的N沟道增强型MOSFET)
900V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQU2N90 FQD2N90 FQD2N90TF FQD2N90TM FQU2N90TU |
900V N-Channel QFET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
