| PART |
Description |
Maker |
| MMIX1T660N04T4 |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTN62N50L |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTQ3N150M |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTA3N150HV |
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXFX48N60P IXFK48N60P |
PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| IXTN600N04T2 |
TrenchT2 GigaMOS Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS Corporation
|
| BAT54AW BAT54AWPBF |
0.2 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE
SCHOTTKY DIODE 0.2 Amp
30V 0.2A Schottky Common Anode Diode in a SOT-323 package
|
International Rectifier
|
| BAT54WS BAT54WS-7-F |
SURFACE MOUNT SCHOTTKY BARRIER DIODE
DIODE SCHOTTKY 30V 200MW SOD-323 0.1 A, 30 V, SILICON, SIGNAL DIODE
|
Diodes Incorporated
Diodes, Inc.
|
| SD103AWS-TP SD103BWS-TP |
DIODE SCHOTTKY 40V 350MA SOD323 0.35 A, 40 V, SILICON, SIGNAL DIODE
400mW Small Signal Schottky Diode 20 to 40 Volts
DIODE SCHOTTKY 30V 350MA SOD323
|
Micro Commercial Components, Corp.
|
| BAT62-02L BAT62-02W BAT62-08S BAT62-07W BAT62-03W |
Latest Silicon Discretes - Schottky Diode for power leveling
Schottky Diodes - Low barrier silicon RF Schottky diode for detectors
Schottky Diodes - Low barrier silicon RF Schottky diode array
|
Infineon
|
| BAT68-02L BAT68-07 BAT68-08S BAT68-09S BAT68-06W B |
Silicon Schottky Diodes 硅肖特基二极
Schottky Diodes - Silicon RF Schottky diode for mixer applications in the VHF/UHF range
Schottky Diodes - Silicon RF Schottky diode array
|
INFINEON[Infineon Technologies AG]
|
