PART |
Description |
Maker |
FGW35N60HD |
Discrete IGBT (High-Speed V series) 600V / 35A
|
Fuji Electric
|
FGW15N120HD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
FGW15N120VD |
Discrete IGBT (High-Speed V series) 1200V / 15A
|
Fuji Electric
|
SGH23N60UFD SGH23N60UFDTU |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT High Input Impedance
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation
|
SGW13N60UFD SGW13N60UFDTM |
Discrete, High Performance IGBT with Diode Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
SGF23N60UF SGF23N60UFTU |
Discrete, High Performance IGBT Ultra-Fast IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
SGP13N60UF SGP13N60UFTU |
Ultra-Fast IGBT Discrete, High Performance IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
MG600Q1US65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
TOSHIBA
|
MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor Mitsubishi Electric Semiconductor Toshiba Corporation
|
2SJ220 2SJ220L 2SJ220S |
Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0519-0 01; No. of Positions: 8; Connector Type: Board SILICON P-CHANNEL MOS FET HIGH SPEED POWER SWITCHING
|
Hitachi,Ltd. Hitachi Semiconductor
|