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  HN4B101J Datasheet PDF File

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    HN4B101J

Toshiba, Corp.
Toshiba Semiconductor
Part No. HN4B101J
Description Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): &#160; ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程
Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
File Size 239.71K  /  6 Page

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HUA FENG CIRCUIT





    TOSHIBA
Part No. HN4B101J
Description Power transistor for high-speed switching applications
File Size 244.51K  /  6 Page

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