| PART |
Description |
Maker |
| IS61VPS102436A IS61VPS102436A-166B3 IS61VPS102436A |
1Mb x 36, 2Mb x 18 36Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
1Mb x 36, 2Mb x 18 36Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM
|
Integrated Silicon Solution, Inc
http://
Integrated Silicon Solu...
|
| LHF16KA1 LH28F160S3NS-L10 |
Flash Memory 16M (2MB 8/1MB 16) 闪存16M内存MB的/1MB6
Flash Memory 16M (2MB bb 8/1MB bb 16)
Flash Memory 16M (2MB × 8/1MB × 16)
|
Sharp, Corp.
Sharp Electrionic Components
|
| MCM36F9DG10 MCM36F8 MCM36F8DG10 MCM36F9 |
1MB and 2MB Synchronous Fast Static RAM Module
|
MOTOROLA[Motorola, Inc]
|
| M29W160DB M29W160DB70M1T M29W160DB70M6T M29W160DB7 |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M29W160EB |
16 MBIT (2MB X8 OR 1MB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29W160DT90ZA6T M29DCL3-16T M29W160DB M29W160DB70M |
From old datasheet system
16 Mbit (2Mb x8 or 1Mb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M295V160BB70N1T M29F160 M295V160BB55N1T M295V160BT |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PLCC -25 to 85
16-Bit Bus Transceiver with 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位Mb x81兆x16插槽，启动座单电源闪
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory 16兆位Mb x81兆x16插槽，启动座单电源闪
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PDIP -40 to 85 16兆位Mb x81兆x16插槽，启动座单电源闪
16-Bit Transparent D-Type Latch With 3-State Outputs 48-TVSOP -40 to 85 16兆位Mb x8兆x16插槽，启动座单电源闪
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 48-TVSOP -40 to 85 16兆位Mb x8兆x16插槽，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| GS8324Z18B-225I GS8324Z18B-250I GS8324Z18B-133I GS |
225MHz 6.5ns 2M x 18 36Mb sync NBT SRAM
250MHz 6ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 2M x 18 36Mb sync NBT SRAM
166MHz 8.5ns 2M x 18 36Mb sync NBT SRAM
150MHz 10ns 2M x 18 36Mb sync NBT SRAM
200MHz 7.5ns 2M x 18 36Mb sync NBT SRAM
166MHz 7ns 2M x 18 36Mb sync NBT SRAM
133MHz 11ns 1M x 36 36Mb sync NBT SRAM
150MHz 10ns 1M x 36 36Mb sync NBT SRAM
166MHz 8.5ns 1M x 36 36Mb sync NBT SRAM
200MHz 7.5ns 1M x 36 36Mb sync NBT SRAM
225MHz 6.5ns 1M x 36 36Mb sync NBT SRAM
250MHz 6ns 1M x 36 36Mb sync NBT SRAM
|
GSI Technology
|
| KMM5322104CKU |
2MB X 32 DRAM Simm Using 2MB X 8
|
Samsung Semiconductor
|
| GS8321ZV36E-250I GS8321ZV36E-225I GS8321ZV36E-133 |
Octal 16-/12-Bit Rail-to-Rail DACs with 10ppm/C Max Reference; Package: 20-TSSOP; Temperature Range: 0°C to 70°C
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 36 ZBT SRAM, 8 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 2M X 18 ZBT SRAM, 8.5 ns, PBGA165
36Mb Pipelined and Flow Through Synchronous NBT SRAM 1M X 32 ZBT SRAM, 6.5 ns, PBGA165
|
GSI Technology, Inc.
|
| M48Z2M1Y M48Z2M1Y-70PL1 M48Z2M1Y-70PL9 M48Z2M1YPL |
16 Mb (2Mb x 8) ZEROPOWER SRAM
122 x 32 pixel format, Compact LCD size
16 Mb 2Mb x 8 ZEROPOWER SRAM
|
SGS Thomson Microelectronics
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
