| PART |
Description |
Maker |
| UPA1911TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| UPA1912TE-T2 |
Pch enhancement type MOS FET
|
NEC
|
| 2SJ559 2SJ559-T1 |
Pch enhancement type MOS FET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
|
NEC[NEC]
|
| UPA1950 UPA1950TE UPA1950TE-T2 UPA1950TE-T1 |
2.5 A, 12 V, 0.205 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Pch enhancement-type MOS FET
|
NEC[NEC]
|
| UPA1819GR-9JG-E1 UPA1819GR-9JG-E2 |
Pch enhancement MOS FET
|
NEC
|
| UPA2730TP UPA2730TP-AZ UPA2730TP-E2 UPA2730TP-E1 |
Pch enhancement-type MOS FET
SWITCHING P-CHANNEL POWER MOSFET
SWITCHING N- AND P-CHANNEL POWER MOS FET
42000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET POWER, HSOP-8
|
NEC[NEC]
|
| 2SJ621 2SJ621-T2B 2SJ621-T1B |
RF Bipolar Transistor; Collector Emitter Voltage, Vceo:600mV; Transistor Polarity:Dual P Channel; Power Dissipation:0.36W; C-E Breakdown Voltage:15V; DC Current Gain Min (hfe):20; Collector Current:200mA
MOS FIELD EFFECT TRANSISTOR
Pch enhancement type MOS FET
|
NEC Corp.
NEC[NEC]
|
| 2SK3367-Z-E2 2SK3367-Z-E1 |
N-channel enhancement type Po MOS FET
|
NEC
|
| UPA1804GR-9JG-E1 UPA1804GR-9JG-E2 |
Nch enhancement type MOS FET
|
NEC
|
| UPA1726G-E2 UPA1726G-E1 |
N-channel enhancement type power MOS FET
|
NEC
|
| UPA1722G-E1 UPA1722G-E2 |
N-channel enhancement type power MOS FET
|
NEC
|
