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  enhancement-type Datasheet PDF File

For enhancement-type Found Datasheets File :: 7540    Search Time::2.547ms    
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    AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA

ETC
ANACHIP[Anachip Corp]
Part No. AF4835P AF4835PS AF4835PSA AF4835PSL AF4835PSLA
OCR Text Enhancement Mode Power MOSFET Features - Simple Drive Requirement - Low On-resistance - Fast Switching General Description The advanced...Type: SOP-8L E H L VIEW "A" D 7 (4X) A2 A 0.015x45 7 (4X) A1 e B y C VIEW...
Description P-Channel 30-V (D-S) MOSFET
P-Channel Enhancement Mode Power MOSFET

File Size 245.21K  /  6 Page

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    BTS120 C67078-A5009-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BTS120 C67078-A5009-A2
OCR Text Enhancement mode Temperature sensor with thyristor characteristic The drain pin is electrically shortet to the tab 1 2 3 Pin 1 G 2 D 3 S Type BTS 120 VDS 100 V ID 19 A RDS(on) 0.1 Package TO-220AB Ordering...
Description From old datasheet system
TEMPFET (N channel Enhancement mode Temperature sensor with thyristor characteristic)
N-Channel TEMPFET

File Size 310.34K  /  9 Page

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    IRF234 IRF235 IRF236 IRF237

HARRIS SEMICONDUCTOR
INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. IRF234 IRF235 IRF236 IRF237
OCR Text ...escription These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, test...type TA17413. January 1998 Features * 8.1A and 6.5A, 275V and 250V * rDS(ON) = 0.45 and 0.68 ...
Description 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs
8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

File Size 68.51K  /  7 Page

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    IRF244 IRF245 IRF246 IRF247

INTERSIL[Intersil Corporation]
Part No. IRF244 IRF245 IRF246 IRF247
OCR Text ...escription These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, test...type TA17423. January 1998 Features * 14A and 13A, 275V and 250V * rDS(ON) = 0.28 and 0.34 * ...
Description 14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs
14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs

File Size 70.04K  /  7 Page

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    IRF530FI IRF530 3003

SGS Thomson Microelectronics
STMicroelectronics
Part No. IRF530FI IRF530 3003
OCR Text ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I s s s s s s s s V DSS 100 V 100 V R DS(on) < 0.16 < 0.16 ID 16 A 11 A TYPICAL RDS(on) = 0.12 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANC...
Description From old datasheet system
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

File Size 46.69K  /  6 Page

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    IRF530FP 5758

SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. IRF530FP 5758
OCR Text ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP s s s s s s V DSS 100 V R DS(on) < 0.16 ID 10 A s s TYPICAL RDS(on) = 0.12 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECH...
Description N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
From old datasheet system

File Size 76.48K  /  5 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technolog...Type as DUT VDS VGS Qg 10V Qgs Qgd VGS DUT 3mA Charge Resistive Switching Test Circu...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF9150

Samsung semiconductor
International Rectifier
Intersil Corporation
Part No. IRF9150
OCR Text enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a spec...type TA49230. Features * -25A, -100V * rDS(ON) = 0.150 * Single Pulse Avalanche Energy Rated * S...
Description -25A, -100V, 0.150 Ohm, P-Channel Power MOSFET

File Size 56.86K  /  7 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ... operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching reg...type TA17501. Features * 6A, 100V * rDS(ON) = 0.600 * Single Pulse Avalanche Energy Rated * SOA ...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    IRF9540 RF1S9540SM FN2282

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRF9540 RF1S9540SM FN2282
OCR Text ...er MOSFETs These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, test...Type TA17521. Features * 19A, 100V * rDS(ON) = 0.200 * Single Pulse Avalanche Energy Rated * SOA...
Description 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs
From old datasheet system

File Size 59.17K  /  7 Page

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