PART |
Description |
Maker |
MB84VD22181EH-90-PBS MB84VD22182EH-90-PBS MB84VD22 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 4M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
MB84VD22181FM-70 MB84VD22181FM-70PBS MB84VD22191FM |
32M (X16) FLASH MEMORY & 4M (X16) STATIC RAM
|
SPANSION[SPANSION]
|
LH28F320BFB-PBTL60 |
32M (x16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
LH28F320BFHE-PTTLZ1 |
32M (x16) Flash Memory
|
Sharp Electrionic Components
|
LH28F320BFHE-PBTLZ2 |
32M (x16) Flash Memory
|
Sharp Corporation
|
LH28F320BFHE-PBTL60 |
32M (x16) Flash Memory
|
SHARP[Sharp Electrionic Components]
|
MB84VD21081-85-PBS MB84VD21081-85-PTS MB84VD21091- |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
M36W416TG85ZA1T M36W416TG70ZA6T M36W416TG-ZAT M36W |
16 Mbit 1Mb x16, Boot Block Flash Memory and 4Mbit 256Kb x16 SRAM, Multiple Memory Product CANMS3470L16-23PL/C 16兆x16插槽,开机区块快闪记忆体Mbit的SRAM56Kb x16,内存产品多
|
意法半导 STMicroelectronics N.V.
|
K9F5608D0D-PCB00 K9F5608X0D |
32M x 8 Bit NAND Flash Memory 32M X 8 FLASH 2.7V PROM, 30 ns, PDSO48
|
Samsung semiconductor
|
M36W832TE70ZA1T M36W832TE85ZA1T M36W832TE-ZAT M36W |
SPECIALTY MEMORY CIRCUIT, PBGA66 32 Mbit 2Mb x16, Boot Block Flash Memory and 8 Mbit 512Kb x16 SRAM, Multiple Memory Product
|
SGS Thomson Microelectronics NUMONYX 意法半导 ST Microelectronics
|
S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
|
SPANSION LLC
|