PART |
Description |
Maker |
S3902 S3903 S3903-1024Q S3903-512Q |
MOSFET, Switching; VDSS (V): 400; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V MOSFET, Switching; VDSS (V): 450; ID (A): 14; Pch : -; RDS (ON) typ. (ohm) @10V: 0.43; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V NMOS linear image sensor Current output, high UV sensitivity, excellent linearity, low power consumption MOSFET, Switching; VDSS (V): 450; ID (A): 22; Pch : -; RDS (ON) typ. (ohm) @10V: 0.25; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: -; Package: TO-3P
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Hamamatsu Photonics
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IRLZ34NLPBF IRLZ34NSPBF |
Fast Switching HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035ヘ , ID = 30A ) HEXFET Power MOSFET ( VDSS = 55V , RDS(on) = 0.035Ω , ID = 30A )
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International Rectifier
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SI4435DY SI4435DYTR |
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package Power MOSFET(Vdss=-30V Rds(on)=0.020ohm Power MOSFET(Vdss=-30V, Rds(on)=0.020ohm Power MOSFET(Vdss=-30V/ Rds(on)=0.020ohm SHROUD, PRIVACY; RoHS Compliant: Yes
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IRF[International Rectifier]
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IRC840 |
Power MOSFET(Vdss=500V/ Rds(on)=0.85ohm/ Id=8.0A) Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) Hexfet? Power MOSFET Power MOSFET(Vdss=500V Rds(on)=0.85ohm Id=8.0A) 500V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
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IRF[International Rectifier]
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IRF3205 IRF3205PBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
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IRF[International Rectifier]
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S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
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Hamamatsu Photonics K.K.
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IRF3703 IRF3703PBF |
30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A? Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A) Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A?) Power MOSFET(Vdss=30V/ Rds(on)max=2.8mohm/ Id=210A)
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International Rectifier
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IRFI9630G IRFI9630GPBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=-200V, Rds(on)=0.80ohm, Id=-4.3A) Power MOSFET(Vdss=-200V/ Rds(on)=0.80ohm/ Id=-4.3A)
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IRF[International Rectifier]
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IRFI734G IRFI734 |
450V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=450V Rds(on)=1.2ohm Id=3.4A) Power MOSFET(Vdss=450V, Rds(on)=1.2ohm, Id=3.4A)
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IRF[International Rectifier]
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IRF7301 IRF7301TR |
FERRITE BEAD BLM21A601S Power MOSFET(Vdss=20V Rds(on)=0.050ohm) Power MOSFET(Vdss=20V, Rds(on)=0.050ohm) 20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
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IRF[International Rectifier]
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IRLI530G IRLI530GPBF |
100V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package HEXFET? Power MOSFET HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16惟 , ID=9.7A ) HEXFET Power MOSFET ( VDSS=100V , RDS(on)=0.16Ω , ID=9.7A )
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International Rectifier
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IRF1010NL IRF1010NS IRF1010NSTRR IRF1010NSPBF IRF1 |
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss = 55 V/ Rds(on)=11mohm/ Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?) Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A?
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IRF[International Rectifier]
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