PART |
Description |
Maker |
3PT068080JL |
PHOTO TRANSISTOR CHIPS
|
Silan Microelectronics Joint-stock
|
BPW96 |
Photo Transistor, PHOTO TRANSISTOR DETECTOR, PLASTIC PACKAGE-2
|
Vishay Semiconductors
|
TPS617 E006915 |
PHOTO TRANSISTOR FOR PHOTO INTERRUPLER From old datasheet system
|
Toshiba
|
TPS618 E006916 |
PHOTO TRANSISTOR FOR PHOTO INTERRUPLER From old datasheet system
|
Toshiba
|
BPT-BP0314 BPT-BP0331 BPT-BP2914 BPT-BP2931 BPT-BP |
Water clear, silicon photo transistor Black, silicon photo transistor
|
Yellow Stone Corp
|
BM-10EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate. 5X7 DOT MATRIX DISPLAY, HIGH EFFICIENCY RED/YELLOW GREEN, 30.48 mm
|
BRIGHT LED ELECTRONICS CORP AMERICAN BRIGHT OPTOELECTRONICS CORP
|
THC2017 THC718 THC1420 THC1711 THC2102 THC2192 THC |
BIOPOLAR TRANSISTOR CHIPS 双极晶体管切
|
ETC[ETC] http:// List of Unclassifed Manufacturers N.A. Electronic Theatre Controls, Inc.
|
TLP321 TLP321-2 TLP321-4 |
TOSHIBA Photocoupler GaAs Ired & Photo Transistor TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TOSHIBA Photocoupler GaAs Ired & Photo−Transistor Photocoupler GaAs Ired & Photo .Transistor
|
TOSHIBA[Toshiba Semiconductor]
|
BM-10EG88MD |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
BM-41EG57ND |
hi-eff red chips and green chips, the hi-eff red chips are made from GaAsP on GaP substrate, the green chips are made from GaP on GaP substrate.
|
BRIGHT LED ELECTRONICS CORP
|
ST5811 |
Photo Transistor
|
AUK[AUK corp]
|