| PART |
Description |
Maker |
| RD06HVF1-101 RD06HVF1 |
MOS FET type transistor specifically designed for VHF RF power amplifiers applications.
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
| BFG193 Q62702-F1291 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
|
SIEMENS[Siemens Semiconductor Group]
http://
|
| BFS17P BFS18P. |
RF-Bipolar - NPN Silicon RF transistor for broadband amplifiers
For broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA
|
Infineon Technologies AG
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| CA2830C CA2830 |
RF/Coaxial Connector; RF Coax Type:N; Contact Termination:Crimp or Solder; Impedance:50ohm; Body Style:Straight Plug; RG Cable Type:9, 9A, 9B, 214
34.5 dB 5-200 MHz 800 mWATT WIDEBAND LINEAR AMPLIFIERS
|
Motorola, Inc.
|
| 10A8DD 10A8DDX |
PWM BRUSH TYPE SERVO AMPLIFIERS
|
ETC
List of Unclassifed Manufacturers
|
| Q62702-F1063 BFT93 |
PNP Silicon RF Transistor for broadba...
PNP Silicon RF Transistor (For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA) UHF BAND, Si, PNP, RF SMALL SIGNAL TRANSISTOR, TO-236
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
http://
|
| BFQ70 Q62702-F774 A0532 |
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) NPN硅射频晶体管（对于低噪音的集电极电流IF和电信系统的天线和宽带放大器2mA0mA
NPN Silicon RF Transistor (For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2mA to 20mA) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BFR92P Q62702-F1050 BFR92PQ62702-F1050 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
TRANSISTOR UHF BIPOLAR BREITBAND
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BFY5002 BFY50.MODE4 |
MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR
1000 mA, 35 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-205AD
|
Seme LAB
SEMELAB LTD
|
