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MSM5718B70 - 18-Megabit RDRAM (2M x 9)

MSM5718B70_1149906.PDF Datasheet
 Full text search : 18-Megabit RDRAM (2M x 9)
 Product Description search : 18-Megabit RDRAM (2M x 9)

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PART Description Maker
MSM5718B70 18-Megabit RDRAM (2M x 9)
 OKI electronic componets
S29GL016A10FAIR10 S29GL016A30FAIR10 S29GL032A10FAI 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology
 SPANSION
http://
K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R44 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.
 SAMSUNG[Samsung semiconductor]
Samsung Electronic
K4R578816869A Direct RDRAM?Data Sheet
 Samsung Electronic
K4R571669M Direct RDRAM?Data Sheet
 Samsung Electronic
SST31LH021 31LH021 2 Megabit Flash 1 Megabit SRAM ComboMemory
From old datasheet system
 SST
K4R761869A-FBCCN1 K4R761869A-GCN1 K4R761869A-GCT9 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM
 SAMSUNG SEMICONDUCTOR CO. LTD.
K4R881869 K4R881869M K4R881869M-NCK8 K4R881869M-NB 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM
 Samsung Electronic
SAMSUNG [Samsung semiconductor]
SAMSUNG[Samsung semiconductor]
AT45BR3214B AT45BR3214B-C1 32-MEGABIT DATAFLASH 4-MEGABIT SRAM STACK MEMORY
 ATMEL Corporation
S29CD016G0JFAA002 S29CD016G0JFAA012 S29CD016G0JFAA 32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
 SPANSION[SPANSION]
AT28C010 AT28C010-12 AT28C010-12DM_883 AT28C010-15 1 Megabit 128K x 8 Paged CMOS E2PROM
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From old datasheet system
 ATMEL[ATMEL Corporation]
 
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