| PART |
Description |
Maker |
| MGFS45V2325 S452325 |
2.3 - 2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带功率30W国内MATCHD砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFS45V273504 MGFS45V2735 |
2.7 - 3.5GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| SY58012UMITR SY58012UMI SY58012U |
5GHz 1:2 LVPECL FANOUT BUFFER/TRANSLATOR WITH INTERNAL INPUT TERMINATION
5GHz, 1:2 LVPECL FANOUT BUFFER/TRANSLATOR WITH INTERNAL INPUT TERMINATION 58012 SERIES, LOW SKEW CLOCK DRIVER, 2 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), QCC16
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
Micrel Semiconductor, Inc.
|
| SY89847U SY89847UMG SY89847UMGTR |
1.5GHz Precision, LVDS 1:5 Fanout with 2:1 MUX and Fail Safe Input with Internal Termination
|
Micrel Semiconductor
|
| MGFC36V7785A_04 MGFC36V7785A |
7.7 ~ 8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| ESLT-S245E |
2012 Size 2.4/2.5GHz Band Chip Multilayer RF Transformer
|
HITACHI-METALS[Hitachi Metals, Ltd]
|
| MGFS44V273598 MGFS44V2735_98 MGFS44V2735 |
2.7-3.5GHz BAND 25W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| FMPA215107 FMPA2151 |
2.4-2.5GHz and 4.9-5.9GHz Dual Band Linear Power Amplifier Module
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| MGFC40V7785A C407785A |
From old datasheet system
7.7 - 8.5GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| NJG1553F-C4 NJG1553F-C7 NJG1553F-L6 NJG1553F-C3 NJ |
1.5GHz/1.9GHz Mixer GaAs MMIC(1.5GHz/1.9GHz砷化镓单片微波集成电路混频器(用于数字移动电话和PHS手机
1.5ghZ/1.9ghZ mixer gAaS mmic 1.5ghZ/1.9ghZ砷化镓MMIC混频
|
New Japan Radio Co., Ltd.
|
