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  matchd Datasheet PDF File

For matchd Found Datasheets File :: 49    Search Time::1.125ms    
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    MGFS45V2527

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2527
OCR Text matchd GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTL...
Description 2.5 - 2.7GHz BAND 30W INTERNALLY matchd GaAs FET 2.5 - 2.7GHz频带功率30W国内matchd砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY matchd GaAs FET

File Size 30.81K  /  2 Page

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    DG201208 DG2012DL-T1 DG2012DL-T1-E3

Vishay Siliconix
Part No. DG201208 DG2012DL-T1 DG2012DL-T1-E3
OCR Text ...On-Resistance rON Flatnessd rON matchd Symbol VNO, VNC VCOM rON rON Flatness rON INO(off) INC(off) ICOM(off) Full V+ = 1.8 V, VCOM = 0.2 V/0.9 V INO, INC = 10 mA V+ = 1.8 V, VCOM = 0 to V+, INO, INC = 10 mA Room Fulld Room Room V+ = 2...
Description Low-Voltage Single SPDT Analog Switch

File Size 119.34K  /  9 Page

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    Vishay
Part No. DG9461 70832
OCR Text ...in-Source On-Resistance rDS(on) matchd rDS(on) Flatnessf NO or NC Off Leakage Current g COM Off Leakage Current g Channel-On Leakage Current g VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 1.5 V, V+ =...
Description Low-Voltage Single SPDT Analog Switch
From old datasheet system

File Size 88.93K  /  7 Page

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    DG946108 DG9461DY-T1 DG9461DY-T1-E3 DG9461DV-T1 DG9461DV-T1-E3

Vishay Siliconix
Part No. DG946108 DG9461DY-T1 DG9461DY-T1-E3 DG9461DV-T1 DG9461DV-T1-E3
OCR Text ...ain-Source On-Resistance rDS(on)matchd rDS(on) Flatnessf NO or NC Off Leakage Currentg COM Off Leakage Currentg Channel-On Leakage Currentg Digital Control Input Current Dynamic Characteristics Turn-On Time Turn-Off Time Break-Before-Make T...
Description Low-Voltage Single SPDT Analog Switch

File Size 110.88K  /  8 Page

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    Mitsubishi
Part No. MGFS45V2527 S452527
OCR Text matchd GaAs FET DESCRIPTION The MGFS45V2527 is an internally impedance matched GaAs power FET especially designed for use in 2.5~2.7 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTL...
Description 2.5~2.7GHz BAND 30W INTERNALLY matchd GaAs FET
From old datasheet system

File Size 27.03K  /  2 Page

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    Vishay
Part No. DG9233 DG9232 70837
OCR Text ...in-Source On-Resistance rDS(on) matchd rDS(on) Flatnessd NO or NC Off Leakage Current g COM Off Leakage Current g Channel-On Leakage Current g VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 1.5 V, V+ =...
Description Low-Voltage Dual SPST Analog Switch
From old datasheet system

File Size 95.00K  /  7 Page

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    Vishay Intertechnology, Inc.
Part No. DG2731NBSP DG2731
OCR Text ....0 V / 0.3 V Full Room Full rON matchd rON INO(off), INC(offF) ICOM(off) Channel-On Leakage Current Digital Control Input High Voltage Input Low Voltage Input Capacitance Input Current Dynamic Characteristics Turn-On Time Turn-Off Time Brea...
Description Low Voltage, Low On-Resistance, Dual SPDT Analog Switch
From old datasheet system

File Size 264.16K  /  9 Page

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    Vishay
Part No. DG9262 70862
OCR Text ...e On-Resistance rDS(on) rDS(on) matchd Flatnessd VANALOG rDS(on) DrDS(on) rDS(on) Flatness INO/NC(off) ICOM(off) ICOM(on) VNO or VNC = 1.5 V, V+ = 2.7 V ICOM = 5 mA VNO or VNC = 1.5 V VNO or VNC = 1 and 2 V VNO or VNC = 1 V / 2 V, VCOM = 2 ...
Description Low-Voltage Dual SPST Analog Switch
From old datasheet system

File Size 95.67K  /  7 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2123 S452123
OCR Text matchd GaAs FET DESCRIPTION The MGFS45V2123 is an internally impedance matched GaAs power FET especially designed for use in 2.1~2.3 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTL...
Description 2.1 - 2.3GHz BAND 30W INTERNALLY matchd GaAs FET
From old datasheet system
2.1~2.3GHz BAND 30W INTERNALLY matchd GaAs FET

File Size 24.72K  /  2 Page

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    MGFS45V2325 S452325

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. MGFS45V2325 S452325
OCR Text matchd GaAs FET DESCRIPTION The MGFS45V2325 is an internally impedance matched GaAs power FET especially designed for use in 2.3~2.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. OUTL...
Description 2.3 - 2.5GHz BAND 30W INTERNALLY matchd GaAs FET 2.3 - 2.5GHz频带功率30W国内matchd砷化镓场效应
From old datasheet system
2.3-2.5GHz BAND 30W INTERNALLY matchd GaAs FET

File Size 26.63K  /  2 Page

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For matchd Found Datasheets File :: 49    Search Time::1.125ms    
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