| PART |
Description |
Maker |
| FQA9N90C |
900V N-Channel Q-FET
900V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQPF9N50CYDTU |
500V N-Channel Advance Q-FET C-Series; Package: TO-220F; No of Pins: 3; Container: Rail 9 A, 500 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| FQU6N50C FQD6N50C FQD6N50CTF FQD6N50CTM |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary planar stripe, DMOS technology
500V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| FQA11N90C |
900V N-Channel MOSFET 11 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
900V N-Channel Advanced QFET C-Series
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FQA32N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFBF20L IRFBF20S IRFBF20STRL IRFBF20STRR |
Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A) 功率MOSFET（减振钢板基本\u003d 900V，的Rds（on）\u003d 8.0ohm，身份证\u003d 1.7A
900V Single N-Channel HEXFET Power MOSFET in a TO-262 package
900V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQA62N25C |
250V N-Channel MOSFET 62 A, 250 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
250V N-Channel Advance Q-FET C-Series
|
Fairchild Semiconductor, Corp.
|
| FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI8N60C FQB8N60C FQB8N60CTM |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQB11N40C FQI11N40C FQB11N40CTM |
400V N-Channel MOSFET
400V N-Channel Advance Q-FET C-Series
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
| FQI13N50C FQB13N50C FQI13N50CTU |
500V N-Channel MOSFET
500V N-Channel Advance Q-FET C-Series
|
http://
FAIRCHILD[Fairchild Semiconductor]
|
