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    IRF1405L IRF1405S

IRF[International Rectifier]
Part No. IRF1405L IRF1405S
OCR Text ...V TOP 100 4.5V 20s PULSE width TJ = 25 C 1 10 100 4.5V 20s PULSE width TJ = 175 C 1 10 100 1 0.1 10 0.1 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics ...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=131A?)
55V Single N-Channel HEXFET Power MOSFET in a TO-262 package
55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

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    IRF1405

International Rectifier
Part No. IRF1405
OCR Text ...D) Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). Starting TJ = 25C, L = 0.11mH RG = 25, IAS = 101A. (See Figure 12). ISD 101A, di/dt 210A/s, VDD V(BR)DSS, TJ 175C Pulse width 400s; duty cyc...
Description Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A?)
Power MOSFET(Vdss=55V, Rds(on)=5.3mohm, Id=169A)
Power MOSFET(Vdss=55V/ Rds(on)=5.3mohm/ Id=169A)

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    IRF1407L IRF1407S IRF1407STRR

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF1407L IRF1407S IRF1407STRR
OCR Text ...) Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). U Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . R Starting TJ = 25C, L ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078з, Id = 100A?)
Power MOSFET(Vdss = 75V, Rds(on) = 0.0078, Id = 100A)
Power MOSFET(Vdss = 75V/ Rds(on) = 0.0078/ Id = 100A)
TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 100A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 75V的五(巴西)直| 100号A(丁)|63AB

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    IRF1407

International Rectifier
Part No. IRF1407
OCR Text ...) Q Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11). R Starting TJ = 25C, L = 0.13mH RG = 25, IAS = 78A. (See Figure 12). S ISD 78A, di/dt 320A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cy...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A?)
POWER MOSFET(VDSS=75V, RDS(ON)=0.0078OHM, ID=130Aㄌ)
Power MOSFET(Vdss=75V, Rds(on)=0.0078ohm, Id=130A)
Power MOSFET(Vdss=75V/ Rds(on)=0.0078ohm/ Id=130A)

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    IRF140SMD

International Rectifier
Seme LAB
Part No. IRF140SMD
OCR Text ...W Notes 1) Pulse Test: Pulse width 300ms, d 2% 2) @ VDD = 25V , L 0.8mH , RG = 25W , Peak IL = 22A , Starting TJ = 25C 3) @ ISD 22A , di/dt 170A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 9.1W Semelab plc. Telephone +44(0)145...
Description N-CHANNEL POWER MOSFET

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    IRF150SMD

SemeLAB
SEME-LAB[Seme LAB]
Part No. IRF150SMD
OCR Text ...W Notes 1) Pulse Test: Pulse width 300ms, d 2% 2) @ VDD = 25V , L 0.3mH , RG = 25W , Peak IL = 27A , Starting TJ = 25C 3) @ ISD 27A , di/dt 70A/ms , VDD BVDSS , TJ 150C , SUGGESTED RG = 2.35W Semelab plc. Telephone +44(0)145...
Description N-CHANNEL POWER MOSFET

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    IRF1607

International Rectifier
Part No. IRF1607
OCR Text ...D) Repetitive rating; pulse width limited by Coss eff. is a fixed capacitance that gives the same charging time max. junction temperature. (See fig. 11). as Coss while VDS is rising from 0 to 80% VDSS . Starting TJ = 25C, L = 0.21m...
Description Power MOSFET(Vdss=75V, Rds(on)=0.0075ohm, Id=142A)

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    IRF1704

International Rectifier
Part No. IRF1704
OCR Text ...D) Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) Starting TJ = 25C, L = 0.13mH, VGS = 10V RG = 25, IAS = 100A. (See Figure 12) ISD 100A, di/dt 150A/s, VDD V(BR)DSS, TJ 200C Pulse width 400s;...
Description Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A??
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A)
POWER MOSFET(VDSS=40V, RDS(ON)=0.004OHM, ID=170Aㄌ)
Power MOSFET(Vdss=40V, Rds(on)=0.004ohm, Id=170A?)
Power MOSFET(Vdss=40V/ Rds(on)=0.004ohm/ Id=170A)

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    IRF1902 IRF1B902 IRF1902TR

International Rectifier
Part No. IRF1902 IRF1B902 IRF1902TR
OCR Text ...s: Repetitive rating; pulse width limited by max. junction temperature. Surface mounted on 1 in square Cu board Pulse width 400s; duty cycle 2%. 2 www.irf.com IRF1902 100 VGS 7.0V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V BOTT...
Description 20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
Power MOSFET(Vdss=20V)

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    IRF2204

International Rectifier
Part No. IRF2204
OCR Text ... 4.5V 10 10 20s PULSE width T J= 25 C 1 0.1 1 10 100 20s PULSE width T J= 175 C 1 0.1 1 10 100 V DS Drain-to-Source Voltage (V) , V DS Drain-to-Source Voltage (V) , Fig 1. Typical Output Characteristics Fig 2. T...
Description 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
AUTOMOTIVE MOSFET

File Size 138.67K  /  9 Page

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