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    STG8206

SamHop Microelectronics Corp.
Part No. STG8206
OCR Text ...Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON). 20 @ V G S = 4.5V 30 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1 2...
Description Dual N-Channel E nhancement Mode Field Effect Transistor

File Size 563.24K  /  7 Page

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    SDM4410

SamHop Microelectronics Corp.
Part No. SDM4410
OCR Text ...YP ID 10A R DS (ON) S uper high dense cell design for low R DS (ON). 11 @ V G S = 10V 15 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)...
Description N-Channel E nhancement Mode F ield E ffect Transistor

File Size 339.86K  /  5 Page

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    STG2507

SamHop Microelectronics Corp.
Part No. STG2507
OCR Text ...x ID 6.2A R DS (ON) S uper high dense cell design for low R DS (ON). 17 @ V G S = -4.5V 25 @ V G S = -2.5V R ugged and reliable. S urface Mount P ackage. D2 8 S2 7 S2 6 G2 5 T S S OP 1 (T OP V IE W) 1...
Description Dual P-Channel E nhancement Mode Field Effect Transistor

File Size 563.19K  /  7 Page

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    SDM9926

SamHop Microelectronics Corp.
Part No. SDM9926
OCR Text ...Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON). 30 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 ...
Description Dual N-Channel E nhancement Mode Field Effect Transistor

File Size 538.69K  /  8 Page

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    STS2622

SamHop Microelectronics Corp.
Part No. STS2622
OCR Text ...x ID 2.5A R DS (ON) S uper high dense cell design for low R DS (ON). 80 @ V G S = 4.5V 110 @ V G S = 2.5V R ugged and reliable. TS OP 6 package. D1 D2 TS OP 6 Top View G1 S1 G2 1 2 3 6 5 4 D1 S2 D2 G1 S1 ...
Description Dual N-Channel Enhancement Mode Field Effect Transistor

File Size 530.64K  /  7 Page

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    SDB55N03L SDP55N03L

SAMHOP[SamHop Microelectronics Corp.]
Part No. SDB55N03L SDP55N03L
OCR Text ...YP ID 55A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 12.5 @ V G S = 10V 20 @ V G S = 4.5V D D G D S G S G S DP S E R ...
Description N-Channel Logic Level E nhancement Mode Field E ffect Transistor

File Size 372.67K  /  5 Page

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    SDU40N03L SDD40N03L

SAMHOP[SamHop Microelectronics Corp.]
Part No. SDU40N03L SDD40N03L
OCR Text ... 42A R DS (ON) ( m W ) S uper high dense cell design for low R DS (ON). 10 @ V G S = 10V 16 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD...
Description N-Channel Logic Level E nhancement Mode Field Effect Transistor

File Size 751.48K  /  8 Page

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    STD9410 STU9410

SAMHOP[SamHop Microelectronics Corp.]
Part No. STD9410 STU9410
OCR Text ...ax ID 24A R DS (ON) S uper high dense cell design for low R DS (ON). 32 @ V G S = 10V 57 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD...
Description N-Channel E nhancement Mode F ield E ffect Transistor

File Size 753.47K  /  8 Page

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    STG8209

SamHop Microelectronics Corp.
Part No. STG8209
OCR Text ...Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON). 26 @ V G S = 4.0V 40 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. D1 D2 T S S OP D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/...
Description Dual N-Channel E nhancement Mode Field Effect Transistor

File Size 619.39K  /  8 Page

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    STG8210

SamHop Microelectronics Corp.
Part No. STG8210
OCR Text ...Max ID 7A R DS (ON) S uper high dense cell design for low R DS (ON). 20 @ V G S = 4.0V 28 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. E S D P rotected. T S S OP D1/D2 S1 S1 G1 1 2 3 4 8 7 6 5 D1/D2 S2 S...
Description Dual N-Channel E nhancement Mode Field Effect Transistor

File Size 565.67K  /  7 Page

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