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  unilateral Datasheet PDF File

For unilateral Found Datasheets File :: 420    Search Time::5.875ms    
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    BFT25

NXP Semiconductors
Philips Semiconductors
Part No. BFT25
OCR Text ...V mA mW GHz pF dB dB maximum unilateral power gain IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C noise figure IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SY...
Description NPN 2 GHz wideband transistor

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    BFG25A_X

NXP Semiconductors
Part No. BFG25A_X
OCR Text ...in transition frequency maximum unilateral power gain noise figure Ts 165 C IC = 0.5 mA; VCE = 1 V IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 C IC = 0.5 mA; VCE = 1 V; f = 1 GHz; = opt; Tam...
Description NPN 5 GHz wideband transistor

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    BFG520W BFG520W_X BFG520W/X

PHILIPS[Philips Semiconductors]
NXP Semiconductors
Part No. BFG520W BFG520W_X BFG520W/X
OCR Text ...ce transition frequency maximum unilateral power gain insertion power gain noise figure Ts 85 C IC = 20 mA; VCE = 6 V IC = 0; VCB = 6 V; f = 1 MHz open emitter collector-emitter voltage RBE = 0 CONDITIONS CODE N3 N4 Top view Fig.1 Si...
Description NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体
NPN 9 GHz wideband transistors

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    BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BFG520 BFG520_XR X BFG520_X BFG520XR BFG520/XR BFG520/X
OCR Text ...ce transition frequency maximum unilateral power gain up to Ts = 88 C; note 1 IC = 20 mA; VCE = 6 V; Tj = 25 C IC = 0; VCB = 6 V; f = 1 MHz IC = 20 mA; VCE = 6 V; f = 1 GHz; Tamb = 25 C IC = 20 mA; VCE = 6 V; f = 900 MHz; Tamb = 25 C IC = 2...
Description NPN 9 GHz wideband transistor L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN 9GHz wideband transistor(NPN 9G赫兹 宽带晶体

File Size 146.07K  /  13 Page

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    BFS17A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFS17A
OCR Text ...on transition frequency maximum unilateral power gain noise figure output voltage up to Ts = 70 C; note 1 IC = 25 mA; VCE = 5 V; f = 500 MHz; Tamb = 25 C IC = 14 mA; VCE = 10 V; f = 800 MHz IC = 2 mA; VCE = 5 V; f = 800 MHz; Tamb = 25 C dim...
Description NPN 3 GHz wideband transistor

File Size 43.58K  /  6 Page

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    PBR941B-15 PBR941B-N-15

Quanzhou Jinmei Electro...
NXP Semiconductors
Part No. PBR941B-15 PBR941B-N-15
OCR Text ... m =1ghz 7 9 ? ghz g um maximum unilateral power gain i c =15ma; v ce =6v; t amb =25 c; f = 1 ghz ? 16 ? db nf noise figure s = opt ; i c =5ma; v ce =6v; f=1ghz ? 1.5 2.5 db p tot total power dissipation t s =60 c; note 1 ?? 360 mw r ...
Description UHF wideband transistor

File Size 150.15K  /  13 Page

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    MRF947AT1 MRF947BT1 MRF947T1 MRF947T3 MMBR941BLT1 MMBR941LT1 MMBR941LT3 MRF9411LT1

Motorola, Inc
Part No. MRF947AT1 MRF947BT1 MRF947T1 MRF947T3 MMBR941BLT1 MMBR941LT1 MMBR941LT3 MRF9411LT1
OCR Text ...C = 15 mA, f = 2.0 GHz) Maximum unilateral Gain (1) (VCE = 6.0 V, IC = 15 mA, f = 1.0 GHz) (VCE = 6.0 V, IC = 15 mA, f = 2.0 GHz) Noise Figure -- Minimum (Figure 9) (VCE = 6.0 V, IC = 5.0 mA, f = 1.0 GHz) (VCE = 6.0 V, IC = 5.0 mA, f = 2.0 ...
Description NPN Silicon Low Noise, High-Frequency Transistors

File Size 307.23K  /  17 Page

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    BFR93AT BFR93AT_2

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BFR93AT BFR93AT_2
OCR Text ...ce transition frequency maximum unilateral power gain Ts 75 C; note 1 IC = 30 mA; VCE = 5 V IC = 0; VCE = 5 V; f = 1 MHz; Tamb = 25 C IC = 30 mA; VCE = 5 V; f = 500 MHz IC = 30 mA; VCE = 8 V; Tamb = 25 C; f = 1 GHz f = 2 GHz F Tj Note 1. T...
Description From old datasheet system
NPN 5 GHz wideband transistor

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    PBR941-15

NXP Semiconductors
Quanzhou Jinmei Electro...
Part No. PBR941-15
OCR Text ... m = 1 ghz 8 - ghz g um maximum unilateral power gain i c = 15 ma; v ce = 6 v; f = 1 ghz; t amb =25 c 15 - db f noise ?gure g s = g opt ; i c = 5 ma; v ce =6v; f = 1 ghz 1.4 - db p tot total power dissipation t s =60 c; note 1 - 360 mw r ...
Description UHF wideband transistor

File Size 113.72K  /  16 Page

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    BFR93AR BFR93AR-2015

NXP Semiconductors
Quanzhou Jinmei Electro...
Part No. BFR93AR BFR93AR-2015
OCR Text ...apacitance transition frequency unilateral power gain Symbol Parameter collector-emitter voltage open base NXP Semiconductors BFR93AR NPN 6 GHz wideband transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description ...
Description NPN 6 GHz wideband transistor

File Size 81.07K  /  13 Page

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