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For tub Found Datasheets File :: 219 Search Time::1.907ms
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				SONY[Sony Corporation]
Part No.	CXK5B18120TM- CXK5B18120TM-12 CXK5B18120TM
OCR Text	...s ns ns tRC tAA tCO tOE tLBC tub tOH tLZ tOLZ tLBLZ, tubLZ tHZ tOHZ tLBHZ, tubHZ Transition is measured 200mV from steady voltage with specified loading in Fig. 1-(2). This parameter is sampled and is not 100% tested. * Write cycl...
Description	128 x 64 pixel format, LED Backlight available -65536-word x 18-bit High Speed Bi-CMOS Static RAM
File Size	177.60K / 10 Page	View it Online	Download Datasheet

				SANREX[SanRex Corporation]
Part No.	DF30BA80 DF30BA40 DF30BA40-80
OCR Text	...Recommended Value 2.5 3.9 25 40 tub Terminal Typical Value 250 90 Ratings DF30BA40 400 480 Conditions Three phase. full wave. TC 122 1 cycle, 50/60HZ, peak value, non-repetitive 40 40 2500 4.7 48 DF30BA80 800 960 Ratings 30 410/450 150 125 ...
Description	(DF30BA40/80) DIODE(THREE PHASES BRIDGE TYPE) From old datasheet system
File Size	90.23K / 2 Page	View it Online	Download Datasheet

				SANREX[SanRex Corporation]
Part No.	DF20BA80 DF20BA40 DF20BA40-80
OCR Text	...Recommended Value 2.5 3.9 25 40 tub Terminal Typical Value 250 90 Ratings DF20BA40 400 480 Conditions Three phase. full wave. TC 123 1 cycle, 50/60HZ, peak value, non-repetitive 40 40 2500 4.7 48 DF20BA80 800 960 Ratings 20 320/350 150 125 ...
Description	From old datasheet system DIODE(THREE PHASES BRIDGE TYPE)
File Size	89.25K / 2 Page	View it Online	Download Datasheet

				SANREX[SanRex Corporation] N.A.
Part No.	DF20AA160 DF20AA120
OCR Text	...Recommended Value 2.5 3.9 25 40 tub Terminal Typical Value 250 90 Ratings DF20AA120 1200 1300 Conditions Three phase. full wave. TC 119 1 cycle, 50/60HZ, peak value, non-repetitive DF20AA160 1600 1700 Ratings 20 220/240 40 150 40 125 2500 4...
Description	DIODE(THREE PHASES BRIDGE TYPE)
File Size	258.54K / 2 Page	View it Online	Download Datasheet

				Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
Part No.	HY62U8400A HY62U8400ALLG HY62U8400ALLG-E HY62U8400ALLG-I HY62U8400ALLR2 HY62U8400ALLT2-E HY62U8400ALLT2-I HY62U8400ALLR2-E HY62U8400ALLR2-I HY62U8400ALLT2
OCR Text	...s Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data r...
Description	512Kx8bit CMOS SRAM 512Kx8bit CMOS SRAM
File Size	178.04K / 11 Page	View it Online	Download Datasheet

				http:// HIROSE[Hirose Electric] Hirose Electric USA, INC. HIROSE ELECTRIC Co., Ltd. Advanced Micro Devices, Inc.
Part No.	FX2BA-60S-1.27R_L FX2M3-60S-1.27SH FX2M3-128P8-DSAL FX2M3-128P8-DSL FX2M3-128S8-DSAL FX2M3-128S8-RC FX2BA-60S-1.27R/L
OCR Text	...View Please use the marketed tub Contact (product compliant to JIS standard: JIS2809) to connect the cable in the power contact area. (However, use phosphor bronze as material.) BCombination View (FX2BA-60S-1.27R/L or FX2M3-60S-1.27S...
Description	IND 10.58 UH /- 20% 1:1 TRANSFORMER Plug-in Connectors for DISK Unit 插件连接器为磁盘单元 128 CONTACT(S), MALE, POWER CONNECTOR, SOLDER
File Size	394.39K / 12 Page	View it Online	Download Datasheet

				ALLEGRO[Allegro MicroSystems]
Part No.	A3966SLB-T A3966SLBTR-T 3966_03
OCR Text	...S O IC P a c k ing 4 7 p e r tub e 1 0 0 0 p e r re e l Pb-based variants are being phased out of the product line. The variants cited in this footnote are in production but have been determined to be LAST TIME BUY. This classificatio...
Description	DUAL FULL-BRIDGE PWM MOTOR DRIVER
File Size	758.60K / 9 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY62V8400ALLG-E HY62V8400ALLG-I HY62V8400ALLG HY62V8400ALLR2 HY62V8400ALLR2-E HY62V8400ALLR2-I HY62V8400ALLT2 HY62V8400ALLT2-E HY62V8400ALLT2-I HY62V8400A
OCR Text	...s Hynix's high performance twin tub CMOS process technology and was designed for high-speed and low power circuit technology. It is particularly well suited for use in high-density and low power system applications. This device has a data r...
Description	Low Power Slow SRAM - 4Mb 512K x8 bit 3.3V Low Power CMOS slow SRAM
File Size	177.53K / 11 Page	View it Online	Download Datasheet

				AEROFLEX[Aeroflex Circuit Technology]
Part No.	UT7C139C45GCX UT7C138C45GCA UT7C138C45WCC UT7C138C55WCA UT7C138C55WPA UT7C138 UT7C139C45GCA UT7C139C45GCC UT7C139C55WPX UT7C138C45GCC UT7C138C45GCX UT7C138C45GPA UT7C138C45GPC UT7C138C45GPX UT7C138C45WCA UT7C138C45WCX UT7C138C45WPA UT7C138C45WPC UT7C138C45WPX UT7C138C55GCA UT7C138C55GCC UT7C138C55GCX UT7C138C55GPA UT7C138C55GPC UT7C138C55GPX UT7C138C55WCC UT7C138C55WCX UT7C138C55WPC UT7C138C55WPX UT7C139 UT7C139C45GPA UT7C139C45GPC UT7C139C45GPX UT7C139C45WCA UT7C139C45WCC UT7C139C45WCX UT7C139C45WPA UT7C139C45WPC UT7C139C45WPX UT7C139C55GCA UT7C139C55GCC UT7C139C55GCX UT7C139C55GPA UT7C139C55GPC UT7C139C55GPX UT7C139C55WCA UT7C139C55WCC UT7C139C55WCX UT7C139C55WPA UT7C139C55WPC 5962G9684501QXA 5962G9684501QXC 5962G9684501QXX 5962G9684501QYA 5962G9684501QYC 5962G9684501QYX 5962G9684501VXA 5962G9684501VXC 5962G9684501VXX 5962G9684501VYA 5962G9684501VYC 5962G9684501VYX 5962G9684502QXA 5962G9684502QXC 5962G9684502QXX 5962G9684502QYA 5962G9684502QYC 5962G9684502QYX 5962G9684502VXA 5962G9684502VXC 5962G9684502VXX 5962G9684502VYA 5962G9684502VYC 5962G9684502VYX 5962G9684503QXA 5962G9684503QXC 5962G9684503QXX 5962G9684503QYA 5962G9684503QYX 5962G9684503QYC 5962F9684501QXA 5962F9684501QXX
OCR Text	...l wafers using an advanced twin-tub CMOS process. In addition, UTMC pays special attention to power and ground distribution during the design phase, minimizing dose-rate upset caused by rail collapse. Table 2. Radiation Hardness Design Spec...
Description	Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx9 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx9 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx8 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx8 dual-port SRAM. Lead finish solder. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx8/9 Radiation-Hardened Dual-Port Static RAM with Busy Flag Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator V. Device type 02 (4Kx9, CMOS compatible inputs, 45 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish solder. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class designator Q. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose G. Federal stock class designator: no options. 4Kx8 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx8 dual-port SRAM. Lead finish gold. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx8 dual-port SRAM. Lead finish gold. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Prototype flow. 4Kx9 dual-port SRAM. Lead finish solder. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. 4Kx9 dual-port SRAM. Lead finish optional. 45ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish optional. Class Q. Device type 01 (4Kx8, CMOS compatible inputs, 45 ns). Total dose 3E5 rads(Si). 4Kx9 dual-port SRAM. Lead finish optional. 55ns access time. CMOS-compatible inputs, 5.5V operation. Total dose none. Dual-port SRAM: SMD with busy flag. Lead finish gold. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 03 (4Kx8, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish solder. Class V. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si). Dual-port SRAM: SMD with busy flag. Lead finish gold. Class Q. Device type 04 (4Kx9, CMOS compatible inputs, 55 ns). Total dose 3E5 rads(Si).
File Size	355.81K / 21 Page	View it Online	Download Datasheet

For tub Found Datasheets File :: 219 Search Time::1.907ms
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