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74F08SC ISR2020C PA006 SL4049BN MAX12 16200 014AR 371906
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  transistor bjt power module Datasheet PDF File

For transistor bjt power module Found Datasheets File :: 150+       Page :: | 1 | 2 | <3> | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    BUT232V03 BUT232V_03 BUT232V

ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
Part No. BUT232V03 BUT232V_03 BUT232V
Description NPN transistor power module
NPN transistor power module
140 A, 300 V, NPN, Si, power transistor

File Size 344.35K  /  7 Page

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    IXYS, Corp.
Part No. ET1275 1SI50A100
Description transistor | bjt power module | INDEPENDENT | 1KV V(BR)CEO | 15A I(C)
transistor | bjt power module | INDEPENDENT | 1KV V(BR)CEO | 50A I(C) 晶体管|晶体管电源模块|独立| 1KV交五(巴西)总裁| 50A条一(c

File Size 43.95K  /  1 Page

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    STE07DE220 E07DE220

ST Microelectronics
STMicroelectronics
Part No. STE07DE220 E07DE220
Description Hybrid emitter switched bipolar transistor ESBT 2200 V - 7 A - 0.07 Ohm power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07з power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07搂? power module
Hybrid emitter switched bipolar transistor ESBT 2200V - 7A - 0.07 power module

File Size 94.73K  /  7 Page

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    ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
Part No. STE70IE120
Description Monolithic Emitter Switched Bipolar transistor ESBT? 1200 V - 70 A - 0.014 Ω power module
Monolithic Emitter Switched Bipolar transistor ESBT 1200V 70A 0.014Ohm power module
Monolithic Emitter Switched Bipolar transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ power module

File Size 127.05K  /  7 Page

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    TOSHIBA
Part No. MP4020
Description power transistor module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.

File Size 128.02K  /  5 Page

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    TOSHIBA[Toshiba Semiconductor]
Part No. MP4514
Description power transistor module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.

File Size 130.57K  /  5 Page

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    TOSHIBA
Part No. MP4303
Description power transistor module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.

File Size 135.80K  /  6 Page

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    Analog Devices, Inc.
Part No. EVK75-050 2DI75S050A
Description transistor | bjt power module | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75A I(C)
5-Pin, Multiple-Input, Programmable Reset ICs
transistor | bjt power module | HALF BRIDGE | DARLINGTON | 600V V(BR)CEO | 75 晶体管|晶体管电源模块|半桥|达林顿| 600V的五(巴西)总裁| 75

File Size 51.39K  /  1 Page

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    EPCOS AG
Electronic Theatre Controls, Inc.
Part No. DE375-301N40-00 DE150-102N02-00
Description transistor | MOSFET power module | INDEPENDENT | 300V V(BR)DSS | 40A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 40A条(丁)
transistor | MOSFET power module | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直|甲(丁)

File Size 60.68K  /  2 Page

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    FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06KF2 FF15R10KN FS75R06KF

Delta Electronics, Inc.
Fuji Electric Holdings Co., Ltd.
Infineon Technologies AG
Part No. FF75R10KN FF150R10KN FF100R10KN FS50R10KF2 FS8R06KF2 FF15R10KN FS75R06KF
Description transistor | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 75A I(C) | M:HL093HD5.6
transistor | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 150A I(C) | M:HL093HW048
transistor | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 100A I(C) | M:HL093HW048
transistor | IGBT power module | 3-PH BRIDGE | 1KV V(BR)CES | 50A I(C)
transistor | IGBT power module | 3-PH BRIDGE | 600V V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 8A条一(c
transistor | IGBT | N-CHAN | DUAL | 1KV V(BR)CES | 15A I(C) | M:HL080HD5.3 晶体管| IGBT的|正陈|双| 1KV交五(巴西)国际消费电子展|5A一(c)|米:HL080HD5.3
transistor | IGBT power module | 3-PH BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 600V的五(巴西)国际消费电子展| 75A条一(c

File Size 48.99K  /  1 Page

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