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NTE[NTE Electronics]
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| Part No. |
NTE6090
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| OCR Text |
to218 type package designed using the Schottky Barrier principle with a platinum barrier metal. Features: D Dual Diode Construction: Pin1 and Pin3 may be Connected for Parallel Operation at Full Range D Guarding for Stress Protection D Low ... |
| Description |
Silicon Dual Power Rectifier
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| File Size |
19.89K /
2 Page |
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NTE[NTE Electronics]
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| Part No. |
NTE2317
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| OCR Text |
...gton configuration mounted in a to218 type package designed for use in automotive ignition applications and inverter circuits for motor controls. Controlled performances in the linear region make this device particularly suitable for car ig... |
| Description |
Silicon NPN Transistor High Voltage Fast Switching Power Darlington
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| File Size |
27.71K /
2 Page |
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it Online |
Download Datasheet |
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NTE[NTE Electronics]
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| Part No. |
NTE2318
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| OCR Text |
...h an internal damper diode in a to218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: D Collector-Emitter Voltage: VCE = 1500V D Collector-Emitter Sustaining Voltage: VCEO(sus)... |
| Description |
Silicon NPN Transistor High Voltage, High Speed Switch
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| File Size |
23.06K /
2 Page |
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it Online |
Download Datasheet |
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