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tmos Datasheet PDF File

For tmos Found Datasheets File :: 674 Search Time::1.64ms
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				ON Semiconductor MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D
OCR Text	tmos E-FET.TM High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance ...
Description	tmos E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate tmos POWER FET 4.0 AMPERES 800 VOLTS From old datasheet system
File Size	156.99K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTB4N80E_D ON2428 ON2426 MTB4N80E
OCR Text	tmos E-FET.TM High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applica...
Description	tmos POWER FET 4.0 AMPERES 800 VOLTS 4 A, 800 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system
File Size	191.71K / 10 Page	View it Online	Download Datasheet

				ON Semiconductor Motorola, Inc Motorola Mobility Holdings, Inc.
Part No.	MTP4N80E_D ON2614 ON2613 MTP4N80 MTP4N80E MTP4N80E-D
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description	tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos POWER FET 4.0 AMPERES 800 VOLTS RDS(on) = 3.0 OHM tmos是功率场效应晶体.0安培800伏特的RDSon）\u003d 3.0欧姆
File Size	155.71K / 8 Page	View it Online	Download Datasheet

				FUJITSU[Fujitsu Media Devices Limited]
Part No.	MB88101A MB88101AP MB88101APF MB88101APFV
OCR Text	...Cf tCSS tCSH tCSR tCHS tCHH tDO tmos tMOH tDVE tDZE tSVE tSZE tSHD tSLD Conditions VCC = 5 V 10% 1 -- -- -- -- -- -- -- -- -- 2 -- -- -- -- -- -- 2 2 Value Min. 1.0 6.0 2.8 2.8 -- tCKL + 0.4 1.0 1.0 0 1.0 -- 0.2 0.1 -- -- -- -- -- -- M...
Description	A/D Converter (With 4-channel Input at 12-bit Resolution)
File Size	90.08K / 18 Page	View it Online	Download Datasheet

				ON Semi
Part No.	MGSF1P02ELT1_D ON1893 ON1892
OCR Text	...ow rDS(on) Small-Signal MOSFETs tmos Single P-Channel Field Effect Transistors Part of the GreenLineTM Portfolio of devices with energy- conserving traits. These miniature surface mount MOSFETs utilize Motorola's High Cell Density, HDtmos ...
Description	From old datasheet system P-CHANNEL ENHANCEMENT-MODE tmos MOSFET
File Size	122.94K / 6 Page	View it Online	Download Datasheet

				Motorola, Inc. ON Semi MOTOROLA[Motorola, Inc]
Part No.	MTB75N03HDL MTB75N03HDL_D ON2451
OCR Text	...L Motorola Preferred Device tmos POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS RDS(on) = 9 mOHM TM D G * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Chara...
Description	tmos POWER FET LOGIC LEVEL 75 AMPERES 25 VOLTS From old datasheet system
File Size	304.17K / 12 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc]
Part No.	MTP2955E
OCR Text	tmos E-FET.TM Power Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate This advanced tmos E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-...
Description	tmos POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3 OHM
File Size	207.17K / 8 Page	View it Online	Download Datasheet

				Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] ON Semi
Part No.	MTP2955 MTP2955D MTP2955V MTP2955V_D ON2574 ON2573
OCR Text	tmos VTM Power Field Effect Transistor tmos V is a new technology designed to achieve an on-resistance area product about one-half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 vo...
Description	tmos POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.230 OHM tmos是功率场效应晶体02安培的RDSon）\u003d 0.230欧姆 From old datasheet system
File Size	113.25K / 8 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] Motorola, Inc. ON SEMICONDUCTOR
Part No.	MTP3N100E MTP3N100E_D ON2598 3N100E MTP3N100E-D
OCR Text	tmos E-FET.TM Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In a...
Description	tmos E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos POWER FET 3.0 AMPERES 1000 VOLTS RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	206.08K / 8 Page	View it Online	Download Datasheet

				ON Semiconductor MOTOROLA[Motorola, Inc] Motorola, Inc.
Part No.	MTP4N50E MTP4N50E_D ON2612 MTP4N50E-D
OCR Text	tmos E-FET.TM High Energy Power FET N-Channel Enhancement-Mode Silicon Gate This advanced high voltage tmos E-FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a...
Description	tmos E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate From old datasheet system tmos POWER FET 4.0 AMPERES 500 VOLTS RDSon = 1.5 OHMS
File Size	254.33K / 8 Page	View it Online	Download Datasheet

For tmos Found Datasheets File :: 674 Search Time::1.64ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | <15> |