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NEC Corp.
NEC[NEC]
CEL[California Eastern Labs]
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| Part No. |
NE5510179A-T1 NE5510179A
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| OCR Text |
...TA
PART NUMBER PACKAGE OUTLINE symbols IGSS IDSS VTH gm RDS (ON) BVDSS CHARACTERISTICS Gate-to-Source Leakage Current Drain-to-Source Leakage Current Gate Threshold Voltage Transconductance Drain-to-Source On Resistance Drain-to-Source Bre... |
| Description |
3.5V的操作硅射频功率MOSFET1.9 GHz的输电功
3.5V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
3.5 V OPERATION SILICON RF POWER MOSFET FOR 1.9 GHZ TRANSMISSION AMPLIFIERS
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| File Size |
38.35K /
4 Page |
 View
it Online |
Download Datasheet
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CEL[California Eastern Labs]
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| Part No. |
NE552R479A-T1A-A NE552R479A
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| OCR Text |
...LINE Functional Characteristics symbols POUT GL CHARACTERISTICS Output Power Linear Gain Power Added Efficiency Drain Current Gate-to-Source Leakage Current Saturated Drain Current (Zero Gate Voltage Drain Voltage) Gate Threshold Voltage Tr... |
| Description |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
392.01K /
9 Page |
View
it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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| Part No. |
NE664M04-T2-A NE664M04
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| OCR Text |
...TLINE EIAJ3 REGISTRATION NUMBER symbols ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 100 mA Output Power at 1 dB compression poin... |
| Description |
MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR
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| File Size |
195.30K /
10 Page |
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it Online |
Download Datasheet |
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NEC Corp.
NEC[NEC]
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| Part No. |
NE664M04-T2 NE664M04
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| OCR Text |
...TLINE EIAJ3 REGISTRATION NUMBER symbols ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 100 mA Output Power at 1 dB compression poin... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
126.05K /
9 Page |
View
it Online |
Download Datasheet |
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California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
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| Part No. |
NE67483B NE67400
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| OCR Text |
...C)
PART NUMBER PACKAGE OUTLINE symbols NF PARAMETERS AND CONDITIONS Noise Figure at VDS = 3 V, ID = 10 mA, f = 4 GHz f = 12 GHz Associated Gain at VDS = 3 V ID = 10 mA, f = 4 GHz f = 12 GHz Output Power at 1 dB Gain Compression Point, f = ... |
| Description |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
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| File Size |
103.82K /
7 Page |
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it Online |
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Duracell
CEL[California Eastern Labs]
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| Part No. |
NE677M04-T2-A NE677M04
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| OCR Text |
...TLINE EIAJ3 REGISTRATION NUMBER symbols ICBO PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current1 Gain at VCE = 3 V, IC = 20 mA Output Power at 1 dB compression point... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
127.21K /
8 Page |
View
it Online |
Download Datasheet |
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