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  submicron Datasheet PDF File

For submicron Found Datasheets File :: 1613    Search Time::1.25ms    
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    INTEGRATED DEVICE TECHNOLOGY INC
Part No. V805L15PFI9 V805L20PF V805L10PF
OCR Text ...tate ? ? ? ? ? high-performance submicron cmos technology ? ? ? ? ? available in a 128-pin thin quad flatpack (tqfp) ? ? ? ? ? industrial temperature range (?40c to +85c) is available description: the idt72v805/72v815/72v825/72v835/72v845 a...
Description 256 X 18 BI-DIRECTIONAL FIFO, 10 ns, PQFP128
256 X 18 BI-DIRECTIONAL FIFO, 12 ns, PQFP128
256 X 18 BI-DIRECTIONAL FIFO, 6.5 ns, PQFP128

File Size 324.56K  /  26 Page

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    INTEGRATED DEVICE TECHNOLOGY INC
Part No. 72V275L10PF8
OCR Text ...qfp) ? ? ? ? ? high-performance submicron cmos technology ? ? ? ? ? industrial temperature range (-40c to +85c) is available description: the idt72v275/72v285 are exceptionally deep, high speed, cmos first-in-first-out (fifo)...
Description 32K X 18 OTHER FIFO, 6.5 ns, PQFP64

File Size 266.29K  /  25 Page

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    ADG719-EP

Analog Devices
Part No. ADG719-EP
OCR Text .... this switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. the adg719-ep can operate from a single-supply range of 1.8 v to 5.5 v, ...
Description CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23 Data Sheet (Rev 0, 04/2010)

File Size 206.32K  /  12 Page

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    INTEGRATED DEVICE TECHNOLOGY INC
Part No. 72815LB15BG
OCR Text ...tate ? ? ? ? ? high-performance submicron cmos technology ? ? ? ? ? available in the 128-pin thin quad flatpack (tqfp). also available for the idt72805lb/72815lb/72825lb, in the 121-lead, 16 x 16 mm plastic ball grid array (pbga) ? ? ? ? ? ...
Description 512 X 18 BI-DIRECTIONAL FIFO, 10 ns, PBGA121

File Size 335.32K  /  26 Page

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    INTEGRATED DEVICE TECHNOLOGY INC
Part No. 72815LB15BGG
OCR Text ...tate ? ? ? ? ? high-performance submicron cmos technology ? ? ? ? ? available in the 128-pin thin quad flatpack (tqfp). also available for the idt72805lb/72815lb/72825lb, in the 121-lead, 16 x 16 mm plastic ball grid array (pbga) ? ? ? ? ? ...
Description 512 X 18 BI-DIRECTIONAL FIFO, 10 ns, PBGA121

File Size 279.69K  /  26 Page

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    ADG719BRT-500RL7 ADG719BRTZ-500RL7 ADG719BRTZ-REEL ADG719BRTZ-R2 ADG719BRM ADG719BRMZ ADG719BRT-REEL7 ADG719BRTZ-REEL7 A

Analog Devices
Part No. ADG719BRT-500RL7 ADG719BRTZ-500RL7 ADG719BRTZ-REEL ADG719BRTZ-R2 ADG719BRM ADG719BRMZ ADG719BRT-REEL7 ADG719BRTZ-REEL7 ADG719BRMZ-REEL7 ADG719BRM-REEL
OCR Text .... this switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. the adg719 can operate from a single-supply range of 1.8 v to 5.5 v, mak...
Description CMOS 1.8 V to 5.5 V, 2.5 Ω 2:1 Mux/SPDT Switch in SOT-23

File Size 210.12K  /  16 Page

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    agilent
Part No. ADA4743
OCR Text ...licon process with self-aligned submicron emitter geometry. the process is capable of simulta- neous high f t and high npn breakdown (25 ghz f t at 6v bvceo). the process utilizes industry standard device oxide isolation technologies and ...
Description Silicon Bipolar Darlington Amplifier

File Size 140.72K  /  9 Page

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    Hewlett-Packard
Part No. ADA4543
OCR Text ...licon process with self-aligned submicron emitter geometry. the process is capable of simulta- neous high f t and high npn breakdown (25 ghz f t at 6v bvceo). the process utilizes industry standard device oxide isolation technologies and ...
Description Silicon Bipolar Darlington Amplifier

File Size 133.98K  /  10 Page

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    ADG719 ADG719BRM ADG719BRT

AD[Analog Devices]
Part No. ADG719 ADG719BRM ADG719BRT
OCR Text ...h. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance and low leakage currents. The ADG719 can operate from a single supply range of +1.8 V to +5.5 V, making ...
Description CMOS Low Voltage 4 ohm SPDT Switch

File Size 117.20K  /  8 Page

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