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  sensitive-gate Datasheet PDF File

For sensitive-gate Found Datasheets File :: 17584    Search Time::3.89ms    
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    RA18H1213G RA18H1213G-01

Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA18H1213G RA18H1213G-01
OCR Text SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA18H1213G BLOCK DIAGRAM 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO DESC...gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal att...
Description 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO 1.24 - 1.30GHz 18W 12.5V阶段制造。对于移动通信

File Size 93.29K  /  9 Page

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    STMicroelectronics N.V.
Part No. DIM150CHS17-E
OCR Text sensitive to electrostatic discharge. users should follow esd handling procedures. 1/8 www.dynexsemi.com pds5716-1.2 february 2004 features trench gate field stop technology low conduction losses low switching losses 10 s short cir...
Description IGBT Modules - Half Bridge IGBT模块-半桥

File Size 145.74K  /  8 Page

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    TS420-600B TS420-600B-TR TS420-600H TS420-600T TS420-700B TS420-700B-TR TS420-700H TS420-700T

STMicroelectronics
Part No. TS420-600B TS420-600B-TR TS420-600H TS420-600T TS420-700B TS420-700B-TR TS420-700H TS420-700T
OCR Text sensitive gate 4 a scrs features on-state rms current, 4 a repetitive peak off-state voltages, 600 and 700 v triggering gate current, 0.2 ma description thanks to highly sensitive triggering levels, the ts420 series is suitable for all...
Description 4 A, 700 V, SCR
Sensitive gate 4 A SCRs

File Size 89.75K  /  11 Page

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    RA07H4452M RA07H4452M-01 RA07H4452M-E01

Mitsubishi Electric Semicon...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07H4452M RA07H4452M-01 RA07H4452M-E01
OCR Text SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M BLOCK DIAGRAM 2 3 440-520MHz 7W 12.5V PORTABLE/ MOBILE RADIO DESCRIPTIO...gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal at...
Description 440-520MHz 7W 12.5V PORTABLE/ MOBILE RADIO

File Size 63.28K  /  9 Page

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    Dynex Semiconductor, Ltd.
Part No. DIM200WHS12-E000
OCR Text sensitive to electrostatic discharge. users should follow esd handling procedures. 1/8 www.dynexsemi.com pds5684-1.2 january 2004 features trench gate field stop technology low conduction losses low switching losses 10 s short circ...
Description Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT

File Size 152.44K  /  8 Page

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    RA07N4452M RA07N4452M-01 RA07N4452M-E01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07N4452M RA07N4452M-01 RA07N4452M-E01
OCR Text SENSITIVE DEVICE OBSERVE HANDLING PRECA UTIONS RA07N4452M 440-520MHz 7.5W 9.6V PORTABLE RADIO BLOCK DIAGRAM 2 3 DESCRIPTION The RA0...gate voltage (V GG=0V), only a small leakage current flows into the drain and the RF input signal at...
Description 440-520MHz 7.5W 9.6V PORTABLE RADIO

File Size 60.69K  /  9 Page

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    NXP Semiconductors N.V.
Part No. BT134W-600E
OCR Text sensitive gate semiconductors product specification triacs bt134w series e sensitive gate general description quick reference data glass passivated, sensitive gate triacs symbol parameter max. max. unit in a plastic envelope suitab...
Description 4Q Triac 4Q双向可控

File Size 120.83K  /  9 Page

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    Shenzhen Winsemi Microelectronics Co., Ltd
Part No. WCD6C60S
OCR Text ...cd6c60s cd6c60s rev.a sep .2010 sensitive sensitive sensitive sensitive gate gate gate gate silicon silicon silicon silicon controlled controlled controlled controlled rectifiers rectifiers rectifiers rectifiers features ? repetitive peak o...
Description Sensitive Gate Silicon Controlled Rectifiers

File Size 404.15K  /  5 Page

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    NXP Semiconductors N.V.
Part No. BT136-800E BT136-800E127
OCR Text sensitive gate four quadra nt triac in a sot78 plastic package intended for use in general purpose bidirectional switching and phase control applications. this sensitive gate "series e" triac is intended to be interfaced directly to micr...
Description 4Q Triac 4Q双向可控
Triacs sensitive gate - I<sub>GT</sub>: 10 mA; I<sub>T</sub> (R<sub>MS</sub>): 4 A; V<sub>DRM</sub>: 800 V; Package: week 1, 2005

File Size 120.34K  /  13 Page

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    RA07M4452MSA10 RA07M4452MSA-101

Mitsubishi Electric Semiconductor
Part No. RA07M4452MSA10 RA07M4452MSA-101
OCR Text ...0 jun 2010 1/9 electrostatic sensitive device observe handling precautions description the ra07m4452msa is a 7-watt rf mosfet amplifi...gate voltag e increases. with a gate voltage around 2.5v (minimum), output p ower and drain curre...
Description RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO

File Size 143.49K  /  9 Page

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