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TC78D NE02135 H1027 TM02129 MB89557A NCBSE1 6060389 BZX84C30
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  princeton advanced components Datasheet PDF File

For princeton advanced components Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC7

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S643232C-TC/L80 K4S643232C-TC/L10 K4S643232C-TC/L55 K4S643232C-TC/L60 K4S643232C-TC/L70 K4S643232C-TC10 K4S643232C-TC70 K4S643232C-TC55 K4S643232C-TC80 K4S643232C-TC60 K4S643232C-TL60 K4S643232C-TL70 V62C5181024LL-70P K4S643232C-TL10
Description ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External components- Fully Encapsulated- Efficiency to 70%
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 200万32内存12k × 32 × 4银行同步DRAM LVTTL
Low Noise Precision advanced LinCMOS(TM) Single Operational Amplifier 8-CDIP -55 to 125 200万32内存12k × 32 × 4银行同步DRAM LVTTL
ECONOLINE: RY & RX - Controllable Output- 1kVDC Isolation- No Heatsink Required- UL94V-0 Package Material- Toroidal Magnetics- No External components- Fully Encapsulated- Efficiency to 70%
Replaced by TLC2201A : advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-PDIP -40 to 85
Replaced by TLC2201A : advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC -40 to 85
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC
Low Noise Precision advanced LinCMOS(TM) Single Operational Amplifier 20-LCCC -55 to 125
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

File Size 1,165.47K  /  43 Page

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    HYB39S512400AT HYB39S512400ATL HYB39S512XX0ATL HYB39S512160AT HYB39S512160AT-7 HYB39S512160AT-7.5 HYB39S512160AT-8 HYB39

INFINEON[Infineon Technologies AG]
Part No. HYB39S512400AT HYB39S512400ATL HYB39S512XX0ATL HYB39S512160AT HYB39S512160AT-7 HYB39S512160AT-7.5 HYB39S512160AT-8 HYB39S512400AT-7 HYB39S512400AT-7.5 HYB39S512400AT-8 HYB39S512800AT HYB39S512800AT-7 HYB39S512800AT-7.5 HYB39S512800AT-8 HYB39S512160ATL HYB39S512800ATL
Description SDRAM components - 512Mb (64M x 8) PC133 3-3-3
SDRAM components - 512Mb (128M x 4) PC133 3-3-3
SDRAM components - 512Mb (32M x 16) PC133 3-3-3
512-Mbit Synchronous DRAM

File Size 529.66K  /  28 Page

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    Infineon
Part No. HYB39S128400CT-7 HYB39S128160CT-7 HYB39S128800CT-7 HYB39S128800CT-7.5 HYB39S128160CT-7.5 HYB39S128400CT-7.5
Description 128Mbit Synchronous DRAMs
SDRAM components - 128Mb (16Mx8) PC133 3-3-3
SDRAM components - 128Mb (8Mx16) PC133 3-3-3
SDRAM components - 128Mb (32Mx4) PC133 3-3-3
128-MBit Synchronous DRAM

File Size 373.48K  /  51 Page

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    Infineon
Part No. HYB25D128160AT-6 HYB25D128400AT-7 HYB25D128800AT-7
Description DDR SDRAM components - 128Mb (8Mx16) DDR333 (2.5-3-3)
DDR SDRAM components - 128Mb (32Mx4) DDR266A (2-3-3)
DDR SDRAM components - 128Mb (16mx8) DDR266A (2-3-3)
128 Mbit Double Data Rate SDRAM

File Size 2,614.12K  /  79 Page

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    IT8673F

List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
Part No. IT8673F
Description advanced Input / Output (advanced I/O) Preliminary Specification V0.5
GT 35C 35#12 SKT PLUG

File Size 809.12K  /  128 Page

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    B39321R981U410 B39321R0981U410

EPCOS
Part No. B39321R981U410 B39321R0981U410
Description SAW components SAW resonator Short range devices
   SAW components

File Size 25.71K  /  5 Page

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    Infineon
Part No. HYB25D128160CE-6 HYB25D128400CE-6 HYB25D128800CE-6
Description DDR SDRAM components - 128Mb (8Mx16) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM components - 128Mb (32Mx4) DDR333 (2.5-3-3); Available 2Q04
DDR SDRAM components - 128Mb (16Mx8) DDR333 (2.5-3-3); Available 2Q04
128 Mbit Double Data Rate SDRAM

File Size 2,681.66K  /  85 Page

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    IT8673F

N.A.
ETC
Part No. IT8673F
Description advanced Input / Output (advanced I/O) Preliminary Specification V0.5

File Size 771.60K  /  128 Page

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    AP01L60AT10

advanced Power Electronics Corp.
Part No. AP01L60AT10
Description advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and costeffectiveness effectiveness

File Size 102.47K  /  5 Page

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    TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 28F400B3 28F800B3 GT28F008B3BA90 GT28F008B3TA110 GT28F008B3BA110 GT28F

TE Connectivity, Ltd.
Intel, Corp.
Intel Corp.
Intel Corporation
Part No. TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 28F400B3 28F800B3 GT28F008B3BA90 GT28F008B3TA110 GT28F008B3BA110 GT28F320B3BA90 GT28F032B3B110 GT28F800B3TA110 GT28F800B3B90 TE28F016B3B90 TE28F320B3B90 GT28F320B3T110 TE28F800B3T90 GT28F400B3B110 GT28F400B3BA110 GT28F032B3T90 GT28F016B3BA110 GT28F032B3BA90 TE28F032B3BA90 TE28F008B3T90 TE28F032B3T90 TE28F032B3T110 GT28F008B3TA90 TE28F032B3XXX
Description (TE28F Series) SMART 3 advanced BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48
RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭
TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48
SMART 3 advanced BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭
SMART 3 advanced BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY
SMART 3 advanced BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY

File Size 282.71K  /  48 Page

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