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Fujitsu, Ltd.
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| Part No. |
MB98A809AX
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| OCR Text |
...x x x xx x l l l l hh h h h h v ppl standby read ( 8) read ( 8) read ( 8) read ( 16) output disable data input / output high-z high-z high-z high-z high-z d out d out (lower byte) d8 to d15 d0 to d7 p or np p or np p or np p or ... |
| Description |
512K Flash Eelectrically Erasable and Programmable (Flash) memory cards(512K电可擦除可编程闪速存储器 12k闪光Eelectrically可擦除和可编程（闪存）记忆卡（为512k电可擦除可编程闪速存储器卡）
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| File Size |
364.43K /
48 Page |
 View
it Online |
Download Datasheet
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Intel Corp.
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| Part No. |
28F008S
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| OCR Text |
... user inter- face when v pp e v ppl . this same subset of operations is also available when high voltage is applied to the v pp pin. in addi- tion, high voltage on v pp enables successful block erasure and byte writing of the device. all fu... |
| Description |
8-MBit (1 MBit x 8) FLASHFILE Memory(8-M(1 Mx 8)闪速存储器)
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| File Size |
351.05K /
28 Page |
View
it Online |
Download Datasheet |
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Intel Corp.
Intel, Corp.
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| Part No. |
28F008SA-L
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| OCR Text |
... user inter- face when v pp e v ppl . this same subset of operations is also available when high voltage is applied to the v pp pin. in addi- tion, high voltage on v pp enables successful block erasure and byte writing of the device. all fu... |
| Description |
8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY 8兆（1兆比特8FLASHFILETM记忆
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| File Size |
442.13K /
28 Page |
View
it Online |
Download Datasheet |
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Intel Corp.
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| Part No. |
M28F008
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| OCR Text |
... user inter- face when v pp e v ppl . this same subset of operations is also available when high voltage is applied to the v pp pin. in addi- tion, high voltage on v pp enables successful block erasure and byte writing of the device. all fu... |
| Description |
8MBit(1MBitx8) Flash Memory(8M1MBitx8)闪速存储器)
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| File Size |
399.07K /
28 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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