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SGS Thomson Microelectronics
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| Part No. |
AN1225
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| OCR Text |
...n overlay geometry is used with poly silicon site ballasting. in addition to this, there is emitter finger ballasting performed also with poly silicon. by using poly silicon to ballast the emitter fingers as well, it is possible to attain t... |
| Description |
RF POWER TRANSISTOR BALLASTING IMPROVES PERFORMANCE OF SURVEILLANCE RADARS
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| File Size |
81.27K /
9 Page |
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Microchip Technology, Inc.
Microchip Technology Inc.
MICROCHIP[Microchip Technology]
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| Part No. |
AN537
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| OCR Text |
...EEPROM CELL
Memory Cell Gate poly-silicon, Level 2 Row Select Transistor Inter-Level Dielectric poly-silicon, Level 1 poly-silicon, Level 2
90 ANG Td Oxide Source Drain
(Not to scale) Common Source Bit Line
Memory Cell Gate Read... |
| Description |
Everything a System Engineer Needs to Know About Serial EEPROM Endurance 一切系统工程师需要了解串行EEPROM耐力
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| File Size |
144.35K /
9 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN900
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| OCR Text |
...to be etched. for instance, the poly gates of a transistor are obtained by etching the poly layer. a second example are the aluminium connec...silicon chips are grouped on a silicon wafer (in the same way postage stamps are printed on a single... |
| Description |
MCUS - INTRODUCTION TO SEMICONDUCTOR TECHNOLOGY
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| File Size |
488.36K /
15 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN473
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| OCR Text |
... to the wires (Ls, Ld, Lg), the poly-silicon gate resistance (Rg), the resistance due both to silicon and to bonding (Rs, Rd), the body-drain capacitance modulation (DBD) and the leakage current when the device is in breakdown. Two points n... |
| Description |
A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL
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| File Size |
42.97K /
7 Page |
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it Online |
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