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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S824BTL
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OCR Text |
pc66 sdram module rev. 5 june '98 revision history revision .3 (march 1998) ? some parameter values & characteristics of comp. level are changed as below : - input leakage currents (inputs) : 5ua to 1ua. - input leakage currents... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
143.42K /
13 Page |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S803BTL
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OCR Text |
pc66 sdram module revision history revision .3 (march 1998) some parameter values & characteristics of comp. level are changed as below : - input leakage currents (inputs) : 5ua to 1ua. - input leakage currents (i/o) : 5ua to... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
142.45K /
13 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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Part No. |
KMM366S823BTL
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OCR Text |
pc66 sdram module kmm366s823btl rev. 5 june '98 revision history revision .3 (march 1998) some parameter values & characteristics of comp. level are changed as below : - input leakage currents (inputs) : 5ua to 1ua. - input leak... |
Description |
8Mx64 SDRAM DIMM(8Mx64 动RAM模块) 8Mx64 SDRAM的内存(8Mx64动态内存模块)
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File Size |
143.39K /
13 Page |
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it Online |
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
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Part No. |
HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS64V2200GU-8 HYS72V4220GU-10 HYS72V4220GU-8 HYS64V4220GU-10 HYS64V4220GU-8 HYS64-72V2200GU-8 pc66-222-920 HYS64V2200GU-8-3 HYS64V4220GU-8-3 HYS72V2200GU-8-3 HYS72V4220GU-8-3 PC100-222-620 PC100-323-620 SIEMENSAG-PC100-222-620
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OCR Text |
...8/-10
*
168 Pin PC100 and pc66 compatible unbuffered 8 Byte Dual-In-Line SDRAM Modules for PC main memory applications 1 bank 2M x 64, 2M x 72 and 2 bank 4M x 64, 4M x 72 organisation Optimized for byte-write non-parity or ECC applica... |
Description |
Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module
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File Size |
103.51K /
17 Page |
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Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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Part No. |
HYS72V2100GCU-10 HYS64V2100GCU-10 HYS72V2100GU-10 HYS64V2100GU-10 HYS64V2100G
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OCR Text |
...arity or ECC applications Fully pc66 layout compatible JEDEC standard Synchronous DRAMs (SDRAM) Performance:
-10 fCK tAC Max. Clock frequency Max. access time from clock 66 MHz @ CL=2 100 MHz @ CL=3 9 ns @ CL=2 8 ns @ CL=3
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Description |
3.3V 2M x 64-Bit SDRAM Module 3.3V 2M x 72-Bit SDRAM Module
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File Size |
74.58K /
12 Page |
View
it Online |
Download Datasheet
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