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For patented Found Datasheets File :: 8656    Search Time::1.594ms    
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    79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH-15 79C0832RPQH-20 79C0832RPQI-15 79C0832RPQI-20 79C0832RPQK-15 79C0832

Maxwell Technologies
ETC[ETC]
Part No. 79C0832 79C0832RPQE-15 79C0832RPQE-20 79C0832RPQH-15 79C0832RPQH-20 79C0832RPQI-15 79C0832RPQI-20 79C0832RPQK-15 79C0832RPQK-20 79C0832RT1QE-15 79C0832RT1QE-20 79C0832RT1QH-15 79C0832RT1QH-20 79C0832RT1QI-15 79C0832RT1QI-20 79C0832RT1QK-15 79C0832RT1QK-20 79C0832RT2QE-15 79C0832RT2QE-20 79C0832RT2QH-15 79C0832RT2QH-20 79C0832RT2QI-15 79C0832RT2QI-20 79C0832RT2QK-15 79C0832RT2QK-20 79C0832RT4QE-15 79C0832RT4QE-20 79C0832RT4QH-15 79C0832RT4QH-20 79C0832RT4QI-15 79C0832RT4QI-20 79C0832RT4QK-15 79C0832RT4QK-20 79C0832RPQE15 79C0832RPQH15 79C0832RPQI15 79C0832RPQI20 79C0832RPQK20 79C0832RT1QE20 79C0832RT2QK15 79C0832RT2QI20 79C0832RT2QI15 79C0832RT2QH20 79C0832RT2QH15 79C0832RT2QE20 79C0832RT2QE15 79C0832RT1QK20 79C0832RT1QK15 79C0832RT1QI20 79C0832RT1QI15 79C0832RT1QH20 79C0832RT1QH15 79C0832RT1QE15 79C0832RPQK15 79C0832RPQH20 79C0832RPQE20
OCR Text ...on. Using Maxwell Technologies' patented radiation-hardened RAD-PAK(R) MCM packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to...
Description 8 Megabit (256K x 32-Bit) EEPROM MCM

File Size 452.52K  /  16 Page

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    AN884

Maxim Integrated Products, Inc.
Part No. AN884
OCR Text ...structure (Figure 3a and 3b). A patented sensorbridge excitation circuit counteracts any decrease in sensitivity by causing the bridge-drive voltage to rise with temperature. The compensated sensor bridge also acts as a temperature sensor, ...
Description Miniature Flow Sensor Has Electronic Temperature Compensation

File Size 287.11K  /  6 Page

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    APT5010B2LL APT5010LLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2LL APT5010LLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 55.78K  /  2 Page

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    APT5010B2 APT5010B2FLL APT5010LFLL

ADPOW[Advanced Power Technology]
Part No. APT5010B2 APT5010B2FLL APT5010LFLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Increased Power Dissipation * Lower Miller Capacitance * Easier To Drive * Lower Gate Charge, Qg * Popular T-MAXTM or TO-264 Package * FAST RECOVERY ...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 54.02K  /  2 Page

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    APT5010JFLL

ADPOW[Advanced Power Technology]
Part No. APT5010JFLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 53.49K  /  2 Page

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    APT5010JLL

ADPOW[Advanced Power Technology]
Part No. APT5010JLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.35K  /  2 Page

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    APT5014BFLL APT5014SFLL

Advanced Power Technology
Part No. APT5014BFLL APT5014SFLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 58.46K  /  2 Page

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    APT5014 APT5014BLL APT5014SLL

Advanced Power Technology
Part No. APT5014 APT5014BLL APT5014SLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.46K  /  2 Page

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    APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016

ADPOW[Advanced Power Technology]
Part No. APT5016BLL APT5016SLL APT5014 APT5014BLL APT5014SLL APT5016
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS

File Size 51.47K  /  2 Page

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    APT5016 APT5016BFLL APT5016SFLL

ADPOW[Advanced Power Technology]
Part No. APT5016 APT5016BFLL APT5016SFLL
OCR Text ...hing speeds inherent with APT's patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate Charge, Qg MAXIMUM RATINGS Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Volta...
Description Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.

File Size 53.90K  /  2 Page

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