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  nm. Datasheet PDF File

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    PNZ150L

PANASONIC[Panasonic Semiconductor]
Part No. PNZ150L
OCR Text ...35 max 0.2 0.5 Unit A A V nm s deg. Measurements were made using infrared light ( = 940 nm) as a light source. Response time measurement circuit Sig.IN VCC (Input pulse) Sig.OUT (Output pulse) 90% 10% td tr tf td : Delay time tr :...
Description Silicon NPN Phototransistor

File Size 45.61K  /  2 Page

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    SEMIX453GAR12E4S10

Semikron International
Part No. SEMIX453GAR12E4S10
OCR Text ...4 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 300 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k characteristics symbol conditio...
Description Trench IGBT Modules

File Size 145.27K  /  5 Page

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    SEMIX453GAL12E4S10

Semikron International
Part No. SEMIX453GAL12E4S10
OCR Text ...4 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 300 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k characteristics symbol conditio...
Description Trench IGBT Modules

File Size 145.19K  /  5 Page

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    SEMIX452GAL126HDS

Semikron International
Part No. SEMIX452GAL126HDS
OCR Text ...5 k/w m s to heat sink (m5) 3 5 nm m t to terminals (m6) 2.5 5 nm nm w 250 g temperatur sensor r 100 t c =100c (r 25 =5 k ? ) 493 5% ? b 100/125 r (t) =r 100 exp[b 100/125 (1/t-1/t 100 )]; t[k]; 3550 2% k characteristics symbol condition...
Description IGBT Modules

File Size 416.33K  /  5 Page

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    Honeywell Accelerometers
Part No. SE5455-003
OCR Text ...) beam angle option l 935 nm wavelength l wide operating temperature range [-55 c to 125 c] l ideal for high pulsed current applications l mechanically and spectrally matched to sd3421/5421 photodiode, sd3443/5443/5...
Description SE Series GaAs Infrared Emitting Diode, TO-46 Metal Can Package

File Size 55.01K  /  5 Page

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    OPTEK TECHNOLOGY INC
Part No. OP280K
OCR Text ... ? high power gaas?op180, 940 nm typical peak wavelength ? standard gaalas-op280, 890nm typical peak wavelength ? high power gaaias?op280k and op280k t, 875 nm typical peakwavelength ? vcsel gaalas-op280v, 850 nm typical peak wav...
Description 2.4 mm, 1 ELEMENT, INFRARED LED, 875 nm

File Size 1,537.72K  /  8 Page

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    NX6240GP

Renesas Electronics Corporation
Part No. NX6240GP
OCR Text nm algainas mqw-dfb laser diode for 10 gb/s e-pon onu application description the nx6240gp is a 1 270 nm multiple quantum well (mqw) structured distributed feed-back (dfb) laser diode with ingaas monitor pin-pd. applications ? 1...
Description LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION

File Size 187.80K  /  7 Page

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